 |  | | |
| PartNumber | FQI19N20TU | FQI19N10LTU | FQI19N20 |
| Description | MOSFET 200V N-Channel QFET | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-262-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 19.4 A | - | - |
| Rds On Drain Source Resistance | 120 mOhms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 3.13 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 7.88 mm | - | - |
| Length | 10.29 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 4.83 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 14.5 S | - | - |
| Fall Time | 80 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 190 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 55 ns | - | - |
| Typical Turn On Delay Time | 20 ns | - | - |
| Part # Aliases | FQI19N20TU_NL | - | - |
| Unit Weight | 0.054004 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQI19N20TU | MOSFET 200V N-Channel QFET | |
| FQI1P50TU | MOSFET 500V P-Channel QFET | ||
| FQI19N10LTU | Neu und Original | ||
| FQI19N20 | Neu und Original | ||
| FQI1N60 | Neu und Original | ||
| FQI1P50 | Neu und Original | ||
ON Semiconductor |
FQI19N20TU | MOSFET N-CH 200V 19.4A I2PAK | |
| FQI1P50TU | MOSFET P-CH 500V 1.5A I2PAK | ||
| FQI19N20CTU | MOSFET N-CH 200V 19A I2PAK |