FQPF3N80C stock, FQPF3N80C, FQPF3N80C


PartNumber	FQPF3N80C	FQPF3N80CYDTU
Description	MOSFET 800V N-Ch Q-FET advance C-Series	MOSFET N-CH/800V/3A/C-FET
Manufacturer	ON Semiconductor	ON Semiconductor
Product Category	MOSFET	MOSFET
RoHS	E	E
Technology	Si	Si
Mounting Style	Through Hole	Through Hole
Package / Case	TO-220FP-3	TO-220-3
Number of Channels	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	800 V	800 V
Id Continuous Drain Current	3 A	3 A
Rds On Drain Source Resistance	4.8 Ohms	4.8 Ohms
Vgs Gate Source Voltage	30 V	30 V
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Pd Power Dissipation	39 W	39 W
Configuration	Single	Single
Channel Mode	Enhancement	Enhancement
Tradename	QFET	-
Packaging	Tube	Tube
Height	16.07 mm	16.3 mm
Length	10.36 mm	10.67 mm
Series	FQPF3N80C	FQPF3N80C
Transistor Type	1 N-Channel	1 N-Channel
Type	MOSFET	-
Width	4.9 mm	4.7 mm
Brand	ON Semiconductor / Fairchild	ON Semiconductor / Fairchild
Forward Transconductance Min	3 S	-
Fall Time	32 ns	32 ns
Product Type	MOSFET	MOSFET
Rise Time	43.5 ns	43.5 ns
Factory Pack Quantity	1000	50
Subcategory	MOSFETs	MOSFETs
Typical Turn Off Delay Time	22.5 ns	22.5 ns
Typical Turn On Delay Time	15 ns	15 ns
Part # Aliases	FQPF3N80C_NL	-
Unit Weight	0.080072 oz	0.090478 oz

Search Part Number : "FQPF3N80C", Match & Start with "FQPF3N80C" - Total : 8

Hersteller	Teil #	Beschreibung
ON Semiconductor / Fairchild	FQPF3N80C	MOSFET 800V N-Ch Q-FET advance C-Series
ON Semiconductor / Fairchild	FQPF3N80CYDTU	MOSFET N-CH/800V/3A/C-FET
ON Semiconductor	FQPF3N80C	MOSFET N-CH 800V 3A TO-220F
ON Semiconductor	FQPF3N80CYDTU	MOSFET N-CH 800V 3A TO-220F
	FQPF3N80C,3N80C	Neu und Original
	FQPF3N80C,3N80C,	Neu und Original
	FQPF3N80C,FQP3N80C	Neu und Original
	FQPF3N80C,FQP3N80C,FQPF2	Neu und Original

FQPF3N80C