 |  | | |
| PartNumber | GS8161E18DD-200IV | GS8161E18DD-200I | GS8161E18DD-200 |
| Description | SRAM 1.8/2.5V 1M x 18 18M | SRAM 2.5 or 3.3V 1M x 18 18M | SRAM 2.5 or 3.3V 1M x 18 18M |
| Manufacturer | GSI Technology | GSI Technology | GSI Technology |
| Product Category | SRAM | SRAM | SRAM |
| Memory Size | 18 Mbit | - | - |
| Organization | 1 M x 18 | - | - |
| Access Time | 6.5 ns | - | - |
| Maximum Clock Frequency | 200 MHz | - | - |
| Interface Type | Parallel | - | - |
| Supply Voltage Max | 2.7 V | - | - |
| Supply Voltage Min | 1.7 V | - | - |
| Supply Current Max | 210 mA, 215 mA | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 85 C | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | BGA-165 | - | - |
| Packaging | Tray | Tray | Tray |
| Memory Type | SDR | - | - |
| Series | GS8161E18DD | GS8161E18DD | GS8161E18DD |
| Type | DCD Pipeline/Flow Through | - | - |
| Brand | GSI Technology | GSI Technology | GSI Technology |
| Moisture Sensitive | Yes | Yes | Yes |
| Product Type | SRAM | SRAM | SRAM |
| Factory Pack Quantity | 18 | 36 | 36 |
| Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |
| Tradename | SyncBurst | SyncBurst | SyncBurst |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
GSI Technology |
GS8161E18DD-250IV | SRAM 1.8/2.5V 1M x 18 18M | |
| GS8161E18DD-200V | SRAM 1.8/2.5V 1M x 18 18M | ||
| GS8161E18DD-200IV | SRAM 1.8/2.5V 1M x 18 18M | ||
| GS8161E18DD-200I | SRAM 2.5 or 3.3V 1M x 18 18M | ||
| GS8161E18DD-250V | SRAM 1.8/2.5V 1M x 18 18M | ||
| GS8161E18DD-200 | SRAM 2.5 or 3.3V 1M x 18 18M | ||
| GS8161E18DD-250I | SRAM 2.5 or 3.3V 1M x 18 18M | ||
| GS8161E18DD-250 | SRAM 2.5 or 3.3V 1M x 18 18M |