GT30J12

GT30J121(Q) vs GT30J121 vs GT30J121,GT30J322

 
PartNumberGT30J121(Q)GT30J121GT30J121,GT30J322
DescriptionIGBT Transistors 600V/30A DIS30A, 600V, N-CHANNEL IGBT
ManufacturerToshibaTOSHIBA-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseTO-3P--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C30 A--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesGT30J121--
Continuous Collector Current Ic Max30 A--
Height19 mm--
Length15.9 mm--
Width4.8 mm--
BrandToshiba--
Product TypeIGBT Transistors--
Factory Pack Quantity50--
SubcategoryIGBTs--
Unit Weight0.238311 oz--
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
GT30J121(Q) IGBT Transistors 600V/30A DIS
GT30J121 30A, 600V, N-CHANNEL IGBT
GT30J121,GT30J322 Neu und Original
GT30J122 Neu und Original
GT30J122 GT30J122A Neu und Original
GT30J122(GREE,Q) Neu und Original
GT30J122(GREE,Q)TOSHIBA- Neu und Original
GT30J122(Q) Neu und Original
GT30J122,GT30J122A, Neu und Original
GT30J122A Neu und Original
GT30J122A . 30J122A Neu und Original
GT30J122A(STA1,E,D Neu und Original
GT30J122A(STA1,E,D) Neu und Original
GT30J122A(STA1ED Neu und Original
GT30J122A,30J122A,GT30J1 Neu und Original
GT30J122A,GT40Q321,30J12 Neu und Original
GT30J122AQ(O) Neu und Original
GT30J124 Neu und Original
GT30J126 Neu und Original
GT30J126(Q) Neu und Original
GT30J127 Neu und Original
GT30J127 30J127 Neu und Original
GT30J121(Q) IGBT Transistors 600V/30A DIS
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