HGTD10

HGTD10N40F1 vs HGTD10N40F1S vs HGTD10N50F1

 
PartNumberHGTD10N40F1HGTD10N40F1SHGTD10N50F1
DescriptionInsulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-251AAInsulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-252AAInsulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, N-Channel, TO-251AA
Hersteller Teil # Beschreibung RFQ
HGTD10N40F1 Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-251AA
HGTD10N50F1S Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, N-Channel, TO-252AA
HGTD10N40F1S Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-252AA
HGTD10N50F1 Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, N-Channel, TO-251AA
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