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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| HGTD10N50F1 | Harris Semiconductor | Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, N-Channel, TO-251AA RoHS: Not Compliant | 2649 |
|
| HGTD10N50F1S | Harris Semiconductor | Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, N-Channel, TO-252AA RoHS: Not Compliant | 495 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: HGTD1N120BNS9A OMO.#: OMO-HGTD1N120BNS9A |
IGBT Transistors 5.3a 1200v N-Ch IGBT NPT Series |
|
Mfr.#: HGTD1N120BNS9A |
IGBT 1200V 5.3A 60W TO252AA |
|
Mfr.#: HGTD10N40F1 OMO.#: OMO-HGTD10N40F1-1190 |
Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-251AA |
|
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Mfr.#: HGTD10N40F1S OMO.#: OMO-HGTD10N40F1S-1190 |
Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-252AA |
|
|
Mfr.#: HGTD10N50F1 OMO.#: OMO-HGTD10N50F1-1190 |
Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, N-Channel, TO-251AA |
|
|
Mfr.#: HGTD10N50F1S OMO.#: OMO-HGTD10N50F1S-1190 |
Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, N-Channel, TO-252AA |
|
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Mfr.#: HGTD14N05B OMO.#: OMO-HGTD14N05B-1190 |
Neu und Original |
|
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Mfr.#: HGTD1N120B OMO.#: OMO-HGTD1N120B-1190 |
Neu und Original |
|
|
Mfr.#: HGTD1N120BNS OMO.#: OMO-HGTD1N120BNS-1190 |
IGBT Transistors NPTPIGBT TO252 5.3A 1200V |
|
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Mfr.#: HGTD1N120BNS 1N120B OMO.#: OMO-HGTD1N120BNS-1N120B-1190 |
Neu und Original |
