 |  | | |
| PartNumber | IPB011N04N G | IPB011N04N | IPB011N04NG |
| Description | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS 3 | Trans MOSFET N-CH 40V 180A 7-Pin TO-263 T/R (Alt: SP000388298) | |
| Manufacturer | Infineon | INFINEON | INFINEON |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-7 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 180 A | - | - |
| Rds On Drain Source Resistance | 1.1 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 250 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 13 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 10 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 63 ns | - | - |
| Typical Turn On Delay Time | 40 ns | - | - |
| Part # Aliases | IPB011N04NGATMA1 IPB11N4NGXT SP000388298 | - | - |
| Unit Weight | 0.056438 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB011N04N G | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS 3 | |
| IPB011N04NGATMA1 | MOSFET N-CH 40V 180A TO263-7 | ||
Infineon Technologies |
IPB011N04NGATMA1 | MOSFET MV POWER MOS | |
| IPB011N04N | Neu und Original | ||
| IPB011N04NG | Trans MOSFET N-CH 40V 180A 7-Pin TO-263 T/R (Alt: SP000388298) | ||
| IPB011N04NGATMA1 , 2SD18 | Neu und Original | ||
| IPB011N04NGS | Neu und Original |