IPB011N04NGATMA1

Mfr. #:: IPB011N04NGATMA1
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET MV POWER MOS
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IPB011N04NGATMA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IPB011N04NGATMA1 Datasheet IPB011N04NGATMA1 Datasheet (P4-P6)IPB011N04NGATMA1 Datasheet (P7-P9)
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: TO-263-7

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Aufbau:: Single

Handelsname:: OptiMOS

Verpackung:: Spule

Höhe:: 4.4 mm

Länge:: 10 mm

Transistortyp:: 1 N-Channel

Breite:: 9.25 mm

Marke:: Infineon-Technologien

Produktart:: MOSFET

Unterkategorie:: MOSFETs

Teil # Aliase:: G IPB011N04N IPB11N4NGXT SP000388298

Tags: IPB011N04NG, IPB011N04N, IPB011, IPB01, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB011N04NGATMA1 Beschreibung

***ure Electronics: Single N-Channel 40 V 1.1 mOhm 188 nC OptiMOS Power Mosfet - D2PAK-7

***p One Stop: Trans MOSFET N-CH 40V 180A 7-Pin(6+Tab) D2PAK T/R

***ineon SCT: OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops, PG-TO263-7, RoHS

***ment14 APAC: MOSFET, N CH, 180A, 40V, PG-TO263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:40V; On Resistance Rds(on):850µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:7; SVHC:No SVHC (20-Jun-2011); Current Id Max:180A; Power Dissipation Pd:250W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon: OptiMOS 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applictions; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Isolated DC-DC converters; Motor control; Or-ing switches

***ical: Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

***emi: N-Channel PowerTrench® MOSFET 40V, 80A, 2.5mΩ

***ure Electronics: N-Channel 40 V 120 A 2.5 mohm Surface Mount PowerTrench® Mosfet - TO-263AB

***r Electronics: Power Field-Effect Transistor, 28A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:28A; On Resistance, Rds(on):0.0019ohm; Rds(on) Test Voltage, Vgs:2.8V; Threshold Voltage, Vgs Typ:20V ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:40V; On Resistance Rds(on):1.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-263; Capacitance Ciss Typ:15000pF; Current Id Max:28A; Fall Time tf:17.9ns; Junction Temperature Tj Max:175°C; No. of Transistors:1; Package / Case:D2-PAK; Pin Format:G,D,S; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Pulse Current Idm:70A; Reverse Recovery Time trr Typ:52ns; Rise Time:24ns; SMD Marking:FDB8441; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

***ure Electronics: Single N-Channel 40 V 1.5 mOhm 260 nC OptiMOS Power Mosfet - D2PAK

***ical: Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) D2PAK T/R

***ineon SCT: OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops, PG-TO263-3, RoHS

***ment14 APAC: MOSFET, N CH, 120A, 40V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):1.2mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:120A; Power Dissipation Pd:250W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon: OptiMOS 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applictions; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Isolated DC-DC converters; Motor control; Or-ing switches

***p One Stop: Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) D2PAK T/R

***ineon SCT: OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops, PG-TO263-3, RoHS

***nell: MOSFET, N CH, 120A, 40V, PG-TO263-3; Transistor Polarity:N; Current Id Max:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):1.2mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Power Dissipation:250W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO263; No. of Pins:3; Transistor Type:Power MOSFET

***ineon: OptiMOS 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applictions; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Isolated DC-DC converters; Motor control; Or-ing switches

***ical: Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) D2PAK T/R

***emi: 40V N-Channel PowerTrench® MOSFET

***ark: N CHANNEL MOSFET, 40V, 80A TO-263AB, FULL REEL

***et: TRANS MOSFET N-CH 40V 80A 3PIN TO-263AB

***Yang: MOSFET N-CH 40V 28A/80A TO263AB

***ment14 APAC: MOSFET, N, SMD, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:40V; On Resistance Rds(on):2.1mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:2.9V; Power Dissipation Pd:254W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Current Id Max:80A; Package / Case:D2-PAK; Power Dissipation Pd:254W; Power Dissipation Pd:254W; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:2.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

***emi: N-Channel PowerTrench® MOSFET, 40V, 50A, 8.5mΩ

***ure Electronics: N-Channel 40 V 50 A 8.5 mOhm Surface Mount PowerTrench® Mosfet -TO-263AB

*** Stop Electro: Power Field-Effect Transistor, 15A I(D), 40V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***el Electronic: Chip Resistor - Surface Mount 910Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 910 OHM 1% 1/10W 0402

***ment14 APAC: MOSFET, N, SMD, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:40V; On Resistance Rds(on):8.5mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:60W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Package / Case:D2-PAK; Power Dissipation Pd:60W; Power Dissipation Pd:60W; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V

***rchild Semiconductor: This N–Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application.

***et: Trans MOSFET N-CH 40V 50A 3-Pin(2+Tab) TO-263

***i-Key: N-CHANNEL POWER MOSFET

***ment14 APAC: MOSFET, N CH, 50A, 40V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:40V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:56W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:56W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IPB011N04NGATMA1 DISTI # V72:2272_06376910	Infineon Technologies AG	Trans MOSFET N-CH 40V 180A 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	576	500:$1.7404 250:$1.9193 100:$2.0113 25:$2.5615 10:$2.5874 1:$3.1953
IPB011N04NGATMA1 DISTI # V36:1790_06376910	Infineon Technologies AG	Trans MOSFET N-CH 40V 180A 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	0	1000000:$1.1940 500000:$1.1960 100000:$1.3060 10000:$1.4790 1000:$1.5070
IPB011N04NGATMA1 DISTI # IPB011N04NGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 40V 180A TO263-7 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	478In Stock	500:$1.8402 100:$2.1616 10:$2.6380 1:$2.9400
IPB011N04NGATMA1 DISTI # IPB011N04NGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 40V 180A TO263-7 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	478In Stock	500:$1.8402 100:$2.1616 10:$2.6380 1:$2.9400
IPB011N04NGATMA1 DISTI # IPB011N04NGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 40V 180A TO263-7 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	On Order	5000:$1.3776 2000:$1.4314 1000:$1.5068
IPB011N04NGATMA1 DISTI # 29571887	Infineon Technologies AG	Trans MOSFET N-CH 40V 180A 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	576	6:$3.1953
IPB011N04NGXT DISTI # IPB011N04NGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 40V 180A 7-Pin(6+Tab) TO-263 - Tape and Reel (Alt: IPB011N04NGATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	10000:$1.0409 5000:$1.0599 3000:$1.0969 2000:$1.1379 1000:$1.1809
IPB011N04NGATMA1. DISTI # 27AC6717	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:40V,On Resistance Rds(on):900µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:250W,No. of Pins:7Pins RoHS Compliant: Yes	0	10000:$1.0400 5000:$1.0600 3000:$1.1000 2000:$1.1400 1:$1.1800
IPB011N04N G DISTI # 726-IPB011N04NG	Infineon Technologies AG	MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS 3 RoHS: Compliant	0	1:$2.7100 10:$2.3000 100:$1.9900 250:$1.8900 500:$1.7000 1000:$1.4300 2000:$1.3600 5000:$1.3100
IPB011N04NGATMA1	Infineon Technologies AG		676	339:$2.6420 79:$2.9622 1:$4.8036
IPB011N04NGATMA1 DISTI # 1775516	Infineon Technologies AG	MOSFET, N CH, 180A, 40V, PG-TO263-7 RoHS: Compliant	26	500:$2.5600 250:$2.8500 100:$3.0000 10:$3.4700 1:$4.0800
IPB011N04NGATMA1 DISTI # 1775516	Infineon Technologies AG	MOSFET, N CH, 180A, 40V, PG-TO263-7	526	500:£1.3000 250:£1.4500 100:£1.5400 10:£1.7800 1:£2.3600

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: IPB011N04LGATMA1 OMO.#: OMO-IPB011N04LGATMA1	MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS 3
	Mfr.#: IPB011N04N G OMO.#: OMO-IPB011N04N-G	MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS 3
	Mfr.#: IPB011N04NGATMA1 OMO.#: OMO-IPB011N04NGATMA1	MOSFET MV POWER MOS
	Mfr.#: IPB011N04L OMO.#: OMO-IPB011N04L-1190	Neu und Original
	Mfr.#: IPB011N04LG,011N04 OMO.#: OMO-IPB011N04LG-011N04-1190	Neu und Original
	Mfr.#: IPB011N04LGATMA1 OMO.#: OMO-IPB011N04LGATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 40V 180A TO263-7
	Mfr.#: IPB011N04N OMO.#: OMO-IPB011N04N-1190	Neu und Original
	Mfr.#: IPB011N04NG OMO.#: OMO-IPB011N04NG-1190	Trans MOSFET N-CH 40V 180A 7-Pin TO-263 T/R (Alt: SP000388298)
	Mfr.#: IPB011N04NGATMA1 OMO.#: OMO-IPB011N04NGATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 40V 180A TO263-7
	Mfr.#: IPB011N04NGS OMO.#: OMO-IPB011N04NGS-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 4500
Menge eingeben:

Der aktuelle Preis von IPB011N04NGATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Beginnen mit

IPB011N04NG 5
IPB011N04N 6
IPB011 11
IPB01 53
IPB0 405
IPB 1339

IPB011N04NGATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes