 | | | |
| PartNumber | IPB011N04LGATMA1 | IPB011N04L G | IPB011N04N G |
| Description | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS 3 | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS 3 | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS 3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-7 | TO-263-7 | TO-263-7 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | 40 V |
| Id Continuous Drain Current | 180 A | 180 A | 180 A |
| Rds On Drain Source Resistance | 800 uOhms | 800 uOhms | 1.1 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 346 nC | 346 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 250 W | 250 W | 250 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 180 S | 180 S | - |
| Fall Time | 21 ns | 21 ns | 13 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 13 ns | 13 ns | 10 ns |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 106 ns | 106 ns | 63 ns |
| Typical Turn On Delay Time | 25 ns | 25 ns | 40 ns |
| Part # Aliases | G IPB011N04L IPB11N4LGXT SP000391498 | IPB011N04LGATMA1 IPB11N4LGXT SP000391498 | IPB011N04NGATMA1 IPB11N4NGXT SP000388298 |
| Unit Weight | - | 0.056438 oz | 0.056438 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB011N04LGATMA1 | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS 3 | |
| IPB011N04L G | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS 3 | ||
| IPB011N04N G | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS 3 | ||
| IPB011N04LGATMA1 | MOSFET N-CH 40V 180A TO263-7 | ||
| IPB011N04NGATMA1 | MOSFET N-CH 40V 180A TO263-7 | ||
Infineon Technologies |
IPB011N04NGATMA1 | MOSFET MV POWER MOS | |
| IPB011N04L | Neu und Original | ||
| IPB011N04LG | Neu und Original | ||
| IPB011N04LG,011N04 | Neu und Original | ||
| IPB011N04N | Neu und Original | ||
| IPB011N04NG | Trans MOSFET N-CH 40V 180A 7-Pin TO-263 T/R (Alt: SP000388298) | ||
| IPB011N04NGATMA1 , 2SD18 | Neu und Original | ||
| IPB011N04NGS | Neu und Original |