IPB023N06 stock, IPB023N06, IPB023N06N3


PartNumber	IPB023N06N3	IPB023N06N3G	IPB023N06N3 G
Description		140 A, 60 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263	IGBT Transistors MOSFET N-Ch 60V 140A D2PAK-6
Manufacturer	Infineon Technologies	INF	Infineon Technologies
Product Category	Transistors - FETs, MOSFETs - Single	FETs - Single	Transistors - FETs, MOSFETs - Single
Series	IPB023N06	-	IPB023N06
Packaging	Reel	-	Reel
Part Aliases	IPB023N06N3GATMA1	-	IPB023N06N3GATMA1
Unit Weight	0.056438 oz	-	0.056438 oz
Package Case	TO-263-7	-	TO-263-7
Technology	Si	-	Si
Number of Channels	1 Channel	-	1 Channel
Configuration	Single Quint Source	-	Single Quint Source
Transistor Type	1 N-Channel	-	1 N-Channel
Pd Power Dissipation	214 W	-	214 W
Maximum Operating Temperature	+ 175 C	-	+ 175 C
Minimum Operating Temperature	- 55 C	-	- 55 C
Fall Time	23 ns	-	23 ns
Rise Time	90 ns	-	90 ns
Vgs Gate Source Voltage	20 V	-	20 V
Id Continuous Drain Current	140 A	-	140 A
Vds Drain Source Breakdown Voltage	60 V	-	60 V
Rds On Drain Source Resistance	2.3 mOhms	-	2.3 mOhms
Transistor Polarity	N-Channel	-	N-Channel
Typical Turn Off Delay Time	62 ns	-	62 ns
Typical Turn On Delay Time	31 ns	-	31 ns
Channel Mode	Enhancement	-	Enhancement

Search Part Number : "IPB023N06", Match & Start with "IPB023N06" - Total : 4

Hersteller	Teil #	Beschreibung
	IPB023N06N3	Neu und Original
	IPB023N06N3G	140 A, 60 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
	IPB023N06N3 G	IGBT Transistors MOSFET N-Ch 60V 140A D2PAK-6
Infineon Technologies	IPB023N06N3GATMA1	MOSFET N-CH 60V 140A TO263-7

IPB023N06