IPB081N06L3 stock, IPB081N06L3, IPB081N06L3 G


PartNumber	IPB081N06L3 G	IPB081N06L3GATMA1
Description	MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3	MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
Manufacturer	Infineon	Infineon
Product Category	MOSFET	MOSFET
RoHS	Y	Y
Technology	Si	Si
Mounting Style	SMD/SMT	SMD/SMT
Package / Case	TO-263-3	TO-263-3
Number of Channels	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	60 V	60 V
Id Continuous Drain Current	50 A	50 A
Rds On Drain Source Resistance	6.7 mOhms	6.7 mOhms
Vgs th Gate Source Threshold Voltage	1.2 V	1.2 V
Vgs Gate Source Voltage	20 V	20 V
Qg Gate Charge	29 nC	29 nC
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 175 C	+ 175 C
Pd Power Dissipation	79 W	79 W
Configuration	Single	Single
Channel Mode	Enhancement	Enhancement
Tradename	OptiMOS	OptiMOS
Packaging	Reel	Reel
Height	4.4 mm	4.4 mm
Length	10 mm	10 mm
Series	OptiMOS 3	OptiMOS 3
Transistor Type	1 N-Channel	1 N-Channel
Width	9.25 mm	9.25 mm
Brand	Infineon Technologies	Infineon Technologies
Forward Transconductance Min	35 S	35 S
Fall Time	7 ns	7 ns
Product Type	MOSFET	MOSFET
Rise Time	26 ns	26 ns
Factory Pack Quantity	1000	1000
Subcategory	MOSFETs	MOSFETs
Typical Turn Off Delay Time	37 ns	37 ns
Typical Turn On Delay Time	15 ns	15 ns
Part # Aliases	IPB081N06L3GATMA1 IPB81N6L3GXT SP000398076	G IPB081N06L3 IPB81N6L3GXT SP000398076
Unit Weight	0.139332 oz	0.139332 oz

Search Part Number : "IPB081N06L3", Match & Start with "IPB081N06L3" - Total : 6

Hersteller	Teil #	Beschreibung
Infineon Technologies	IPB081N06L3 G	MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
	IPB081N06L3GATMA1	MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
	IPB081N06L3 G	MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
	IPB081N06L3GATMA1	MOSFET N-CH 60V 50A TO263-3
	IPB081N06L3	Neu und Original
	IPB081N06L3G	Trans MOSFET N-CH 60V 50A 3-Pin TO-263 T/R (Alt: SP000398076)

IPB081N06L3