 | | | |
| PartNumber | IPB180P04P4-03 | IPB180P04P4L-02 | IPB180P04P403ATMA1 |
| Description | MOSFET P-Ch -40V -180A D2PAK-6 OptiMOS-P2 | MOSFET P-Ch -40V -180A D2PAK-6 OptiMOS-P2 | MOSFET P-CHANNEL |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PG-TO-263-7 | TO-263-7 | TO-263-7 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
| Id Continuous Drain Current | 180 A | 180 A | - |
| Rds On Drain Source Resistance | 2.8 mOhms | 3.9 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 1.2 V | - |
| Vgs Gate Source Voltage | 10 V | 4.5 V | - |
| Qg Gate Charge | 190 nC | 220 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 150 W | 150 W | - |
| Configuration | Single | Single | Single |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | OptiMOS-P2 | OptiMOS-P2 | - |
| Transistor Type | 1 N-Channel | 1 P-Channel | 1 P-Channel |
| Width | 9.25 mm | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 81 ns | 119 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 31 ns | 28 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 72 ns | 146 ns | - |
| Typical Turn On Delay Time | 48 ns | 32 ns | - |
| Part # Aliases | IPB180P04P403ATMA1 IPB18P4P43XT SP000840202 | IPB180P04P4L02ATMA1 IPB18P4P4L2XT SP000709460 | IPB180P04P4-03 IPB18P4P43XT SP000840202 |
| Unit Weight | 0.056438 oz | 0.056438 oz | - |
| Channel Mode | - | Enhancement | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB180P04P4-03 | MOSFET P-Ch -40V -180A D2PAK-6 OptiMOS-P2 | |
| IPB180P04P4L-02 | MOSFET P-Ch -40V -180A D2PAK-6 OptiMOS-P2 | ||
| IPB180P04P4L02ATMA1 | MOSFET P-Ch -40V -180A D2PAK-6 OptiMOS-P2 | ||
| IPB180P04P403ATMA1 | MOSFET P-CH TO263-7 | ||
| IPB180P04P4L02ATMA1 | MOSFET P-CH 40V 180A TO263-7 | ||
Infineon Technologies |
IPB180P04P403ATMA1 | MOSFET P-CHANNEL | |
| IPB180P04P4L02ATMA1-CUT TAPE | Neu und Original | ||
| IPB180P04P4L-02 | Trans MOSFET P-CH 40V 180A 7-Pin(6+Tab) TO-263 | ||
| IPB180P04P4-03 | RF Bipolar Transistors MOSFET P-Ch -40V -180A D2PAK-6 OptiMOS-P2 |