IPB180P04P4L

IPB180P04P4L-02 vs IPB180P04P4L02ATMA1 vs IPB180P04P4L02ATMA1-CUT TAPE

 
PartNumberIPB180P04P4L-02IPB180P04P4L02ATMA1IPB180P04P4L02ATMA1-CUT TAPE
DescriptionMOSFET P-Ch -40V -180A D2PAK-6 OptiMOS-P2MOSFET P-Ch -40V -180A D2PAK-6 OptiMOS-P2
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-7PG-TO-263-7-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage40 V40 V-
Id Continuous Drain Current180 A180 A-
Rds On Drain Source Resistance3.9 mOhms2.4 mOhms-
Vgs th Gate Source Threshold Voltage1.2 V1.2 V-
Vgs Gate Source Voltage4.5 V10 V-
Qg Gate Charge220 nC286 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation150 W150 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101AEC-Q101-
TradenameOptiMOS--
PackagingReelReel-
Height4.4 mm4.4 mm-
Length10 mm10 mm-
SeriesOptiMOS-P2XPB180P04-
Transistor Type1 P-Channel1 P-Channel-
Width9.25 mm9.25 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time119 ns119 ns-
Product TypeMOSFETMOSFET-
Rise Time28 ns28 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time146 ns146 ns-
Typical Turn On Delay Time32 ns32 ns-
Part # AliasesIPB180P04P4L02ATMA1 IPB18P4P4L2XT SP000709460IPB180P04P4L-02 IPB18P4P4L2XT SP000709460-
Unit Weight0.056438 oz0.056438 oz-
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IPB180P04P4L-02 MOSFET P-Ch -40V -180A D2PAK-6 OptiMOS-P2
IPB180P04P4L02ATMA1 MOSFET P-Ch -40V -180A D2PAK-6 OptiMOS-P2
IPB180P04P4L02ATMA1 MOSFET P-CH 40V 180A TO263-7
IPB180P04P4L02ATMA1-CUT TAPE Neu und Original
IPB180P04P4L-02 Trans MOSFET P-CH 40V 180A 7-Pin(6+Tab) TO-263
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