 | |  | |
| PartNumber | IPB65R099C6 | IPB65R095C7ATMA1 | IPB65R095C7ATMA2 |
| Description | MOSFET N-Ch 700V 115A D2PAK-2 | MOSFET N-Ch 700V 100A D2PAK-2 | MOSFET N-CH TO263-3 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
| Id Continuous Drain Current | 38 A | 24 A | - |
| Rds On Drain Source Resistance | 89 mOhms | 84 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 3 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 127 nC | 45 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 278 W | 128 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | CoolMOS | CoolMOS | - |
| Packaging | Reel | Reel | - |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Series | CoolMOS C6 | CoolMOS C7 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 6 ns | 7 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 9 ns | 12 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 77 ns | 60 ns | - |
| Typical Turn On Delay Time | 10.6 ns | 14 ns | - |
| Part # Aliases | IPB65R099C6ATMA1 IPB65R99C6XT SP000895224 | IPB65R095C7 SP001080124 | - |
| Unit Weight | 0.077603 oz | 0.068654 oz | - |
| RoHS | - | Y | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB65R099C6ATMA1 | MOSFET N-Ch 700V 115A D2PAK-2 | |
| IPB65R099C6 | MOSFET N-Ch 700V 115A D2PAK-2 | ||
| IPB65R095C7ATMA2 | MOSFET N-CH TO263-3 | ||
| IPB65R099C6ATMA1 | RF Bipolar Transistors MOSFET N-Ch 700V 115A D2PAK-2 | ||
| IPB65R095C7ATMA1 | RF Bipolar Transistors MOSFET N-Ch 700V 100A D2PAK-2 | ||
Infineon Technologies |
IPB65R095C7ATMA1 | MOSFET N-Ch 700V 100A D2PAK-2 | |
| IPB65R095C7 | MOSFET N-Ch 700V 100A D2PAK-2 | ||
| IPB65R099C6 | MOSFET N-Ch 700V 115A D2PAK-2 |