PartNumber | IPB70N10S3L-12 | IPB70N10S312ATMA1 | IPB70N10S3-12 |
Description | MOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T | MOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T | MOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 100 V | 100 V |
Id Continuous Drain Current | 70 A | 70 A | 70 A |
Rds On Drain Source Resistance | 12 mOhms | 9.4 mOhms | 9.4 mOhms |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 60 nC | 66 nC | 66 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 125 W | 125 W | 125 W |
Configuration | Single | Single | Single |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Tradename | OptiMOS | - | OptiMOS |
Packaging | Reel | Reel | Reel |
Height | 4.4 mm | 4.4 mm | 4.4 mm |
Length | 10 mm | 10 mm | 10 mm |
Series | OptiMOS-T | XPB70N10 | OptiMOS-T |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 9.25 mm | 9.25 mm | 9.25 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 5 ns | 8 ns | 8 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 5 ns | 8 ns | 8 ns |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 28 ns | 25 ns | 25 ns |
Typical Turn On Delay Time | 10 ns | 17 ns | 17 ns |
Part # Aliases | IPB70N10S3L12ATMA1 IPB7N1S3L12XT SP000379631 | IPB70N10S3-12 IPB7N1S312XT SP000261246 | IPB70N10S312ATMA1 IPB7N1S312XT SP000261246 |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
Vgs th Gate Source Threshold Voltage | - | 2 V | 2 V |
Channel Mode | - | Enhancement | Enhancement |