 |  |  | |
| PartNumber | IPD06N03LB G | IPD06N03 | IPD06N03LA G |
| Description | MOSFET N-Ch 30V 50A DPAK-2 | MOSFET N-CH 25V 50A DPAK | |
| Manufacturer | Infineon | INFINEON | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 50 A | - | - |
| Rds On Drain Source Resistance | 9.1 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 83 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 78 S / 39 S | - | - |
| Fall Time | 4 ns | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 7 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 28 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD06N03LB G | MOSFET N-Ch 30V 50A DPAK-2 | |
Infineon Technologies |
IPD06N03LB G | MOSFET N-CH 30V 50A TO-252 | |
| IPD06N03LA G | MOSFET N-CH 25V 50A DPAK | ||
| IPD06N03 | Neu und Original | ||
| IPD06N03L | Neu und Original | ||
| IPD06N03LA | MOSFET Transistor, N-Channel, TO-252AA | ||
| IPD06N03LA IPD06N03L | Neu und Original | ||
| IPD06N03LA,06N03LA | Neu und Original | ||
| IPD06N03LA-G | Neu und Original | ||
| IPD06N03LAG , MAX6476UT1 | Neu und Original | ||
| IPD06N03LAGX | Neu und Original | ||
| IPD06N03LAGXT | Neu und Original | ||
| IPD06N03LB | Neu und Original | ||
| IPD06N03LBG | Neu und Original | ||
| IPD06N03LG | Neu und Original | ||
| IPD06N03LZ | Neu und Original | ||
| IPD06N03LZG | Neu und Original | ||
| IPD06N06L | Neu und Original | ||
| IPD06N03LAG | Power Field-Effect Transistor, 50A I(D), 25V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |