 | | | |
| PartNumber | IPD135N08N | IPD135N08N3 G | IPD135N08N3G |
| Description | MOSFET N-Ch 80V 45A DPAK-2 OptiMOS 3 | Trans MOSFET N-CH 80V 45A 3-Pin TO-252 T/R (Alt: IPD135N08N3 G) | |
| Manufacturer | - | Infineon Technologies | INFINEON |
| Product Category | - | Transistors - FETs, MOSFETs - Single | FETs - Single |
| Series | - | OptiMOS 3 | - |
| Packaging | - | Reel | - |
| Part Aliases | - | IPD135N08N3GBTMA1 IPD135N08N3GXT SP000454266 | - |
| Unit Weight | - | 0.139332 oz | - |
| Mounting Style | - | SMD/SMT | - |
| Tradename | - | OptiMOS | - |
| Package Case | - | TO-252-3 | - |
| Technology | - | Si | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single | - |
| Transistor Type | - | 1 N-Channel | - |
| Pd Power Dissipation | - | 79 W | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 5 ns | - |
| Rise Time | - | 35 ns | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 45 A | - |
| Vds Drain Source Breakdown Voltage | - | 80 V | - |
| Rds On Drain Source Resistance | - | 13.5 mOhms | - |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 18 ns | - |
| Typical Turn On Delay Time | - | 12 ns | - |
| Channel Mode | - | Enhancement | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD135N08N3GATMA1 | MOSFET MV POWER MOS | |
| IPD135N08N3GATMA1 | MOSFET N-CH 80V 45A | ||
| IPD135N08N3GBTMA1 | MOSFET N-CH 80V 45A TO252-3 | ||
| IPD135N08N | Neu und Original | ||
| IPD135N08N3 G | MOSFET N-Ch 80V 45A DPAK-2 OptiMOS 3 | ||
| IPD135N08N3G | Trans MOSFET N-CH 80V 45A 3-Pin TO-252 T/R (Alt: IPD135N08N3 G) | ||
| IPD135N08N3GBTMA1 , 2SD2 | Neu und Original |