 |  | | |
| PartNumber | IPD40N03S4L-08 | IPD40DP06NMATMA1 | IPD400N06NGBTMA1 |
| Description | MOSFET N-Ch 30V 40A DPAK-2 OptiMOS-T2 | MOSFET TRENCH 40<-<100V | MOSFET MV POWER MOS |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - 60 V | - |
| Id Continuous Drain Current | 40 A | - 4.3 A | - |
| Rds On Drain Source Resistance | 8.3 mOhms | 400 mOhms | - |
| Configuration | Single | Single | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | OptiMOS | - | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 2.3 mm | - | 2.3 mm |
| Length | 6.5 mm | - | 6.5 mm |
| Series | OptiMOS-T2 | IPD06P007 | - |
| Transistor Type | 1 N-Channel | 1 P-Channel | - |
| Width | 6.22 mm | - | 6.22 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | IPD40N03S4L08ATMA1 IPD4N3S4L8XT SP000475916 | IPD40DP06NM SP004987264 | G IPD400N06N IPD4N6NGXT SP000443744 |
| Unit Weight | 0.139332 oz | - | 0.139332 oz |
| Vgs th Gate Source Threshold Voltage | - | - 4 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 6.7 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Pd Power Dissipation | - | 19 W | - |
| Channel Mode | - | Enhancement | - |
| Forward Transconductance Min | - | 3.8 S | - |
| Fall Time | - | 4 ns | - |
| Rise Time | - | 6 ns | - |
| Typical Turn Off Delay Time | - | 10 ns | - |
| Typical Turn On Delay Time | - | 4 ns | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD40N03S4L-08 | MOSFET N-Ch 30V 40A DPAK-2 OptiMOS-T2 | |
| IPD40DP06NMATMA1 | MOSFET TRENCH 40<-<100V | ||
| IPD400N06NGBTMA1 | MOSFET N-CH 60V 27A TO-252 | ||
| IPD40N03S4L08ATMA1 | MOSFET N-CH TO252-3 | ||
Infineon Technologies |
IPD400N06NGBTMA1 | MOSFET MV POWER MOS | |
| IPD40DP06NMATMA1 | MOSFET P-CH 60V TO252-3 | ||
| IPD400N06NGXT | Trans MOSFET N-CH 60V 27A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD400N06NGBTMA1) | ||
| IPD400N06N | Neu und Original | ||
| IPD400N06N3G 400N06N | Neu und Original | ||
| IPD400N06NG | Neu und Original | ||
| IPD40N03L | Neu und Original | ||
| IPD40N03S4L-08 | MOSFET N-Ch 30V 40A DPAK-2 OptiMOS-T2 | ||
| IPD400N06N G | IGBT Transistors MOSFET N-Ch 60V 27A DPAK-2 |