IPD50N1

IPD50N10S3L-16 vs IPD50N12S3L15ATMA1 vs IPD50N10S3L16ATMA1

 
PartNumberIPD50N10S3L-16IPD50N12S3L15ATMA1IPD50N10S3L16ATMA1
DescriptionMOSFET N-Ch 100V 50A DPAK-2 OptiMOS-TMOSFET N-CHANNEL 100+MOSFET N-CH 100V 50A TO252-3
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current50 A--
Rds On Drain Source Resistance15 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge49 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation100 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101AEC-Q101-
TradenameOptiMOS--
PackagingReelReel-
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
SeriesOptiMOS-T--
Transistor Type1 N-Channel--
Width6.22 mm6.22 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time5 ns--
Product TypeMOSFETMOSFET-
Rise Time5 ns--
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time29 ns--
Typical Turn On Delay Time10 ns--
Part # AliasesIPD50N10S3L16ATMA1 IPD5N1S3L16XT SP000386185IPD50N12S3L-15 SP001400104-
Unit Weight0.014110 oz0.011993 oz-
Moisture Sensitive-Yes-
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IPD50N10S3L-16 MOSFET N-Ch 100V 50A DPAK-2 OptiMOS-T
IPD50N12S3L15ATMA1 MOSFET N-CHANNEL 100+
IPD50N10S3L16ATMA1 MOSFET N-CH 100V 50A TO252-3
IPD50N12S3L15ATMA1 MOSFET N-CHANNEL_100+
IPD50N10S3L Neu und Original
IPD50N10S3L-16 MOSFET N-Ch 100V 50A DPAK-2 OptiMOS-T
IPD50N10S3L-16 QN10L16 Neu und Original
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