 |  |  | |
| PartNumber | IPD50R2K0CEBTMA1 | IPD50R2K0CE | IPD50R2K0CEAUMA1 |
| Description | MOSFET N-Ch 500V 6.1A DPAK-2 | MOSFET N-Ch 500V 6.1A DPAK-2 | MOSFET N-CH 500V 2.4A PG-TO252 |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 500 V | - | - |
| Id Continuous Drain Current | 3.6 A | - | - |
| Rds On Drain Source Resistance | 1.8 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 6 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 33 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | XPD50R2 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 38 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 5 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 21 ns | - | - |
| Typical Turn On Delay Time | 6 ns | - | - |
| Part # Aliases | IPD50R2K0CEBTMA1 SP001023988 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD50R2K0CEBTMA1 | MOSFET N-Ch 500V 6.1A DPAK-2 | |
| IPD50R2K0CE | MOSFET N-Ch 500V 6.1A DPAK-2 | ||
Infineon Technologies |
IPD50R2K0CEAUMA1 | MOSFET N-CH 500V 2.4A PG-TO252 | |
| IPD50R2K0CEBTMA1 | MOSFET N-Ch 500V 6.1A DPAK-2 | ||
| IPD50R2K0CEBTMA1 , 2SD22 | Neu und Original |