 |  | | |
| PartNumber | IPD50R3K0CEBTMA1 | IPD50R3K0CEBTMA1 , 2SD22 | IPD50R3K0CEBTMA1074 |
| Description | MOSFET N-Ch 500V 1.7A DPAK-2 | - Bulk (Alt: IPD50R3K0CEBTMA1074) | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 500 V | - | - |
| Id Continuous Drain Current | 2.6 A | - | - |
| Rds On Drain Source Resistance | 2.7 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 4.3 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 26 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | CoolMOS | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | IPD50R3 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 49 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 5.8 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 23 ns | - | - |
| Typical Turn On Delay Time | 7.3 ns | - | - |
| Part # Aliases | IPD50R3K0CEBTMA1 SP000992074 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD50R3K0CEBTMA1 | MOSFET N-Ch 500V 1.7A DPAK-2 | |
| IPD50R3K0CEBTMA1 , 2SD22 | Neu und Original | ||
| IPD50R3K0CEBTMA1074 | - Bulk (Alt: IPD50R3K0CEBTMA1074) | ||
Infineon Technologies |
IPD50R3K0CEBTMA1 | IGBT Transistors MOSFET N-Ch 500V 1.7A DPAK-2 |