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| PartNumber | IPD80N04S306ATMA1 | IPD80N04S3-06 | IPD80N04S306BATMA1 |
| Description | MOSFET N-CHANNEL_30/40V | MOSFET N-Ch 40V 80A DPAK-2 OptiMOS-T | MOSFET N-CHANNEL_30/40V |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Configuration | Single | Single | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | - |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | IPD80N04S3-06 IPD8N4S36XT SP000261220 | IPD80N04S306ATMA1 IPD8N4S36XT SP000261220 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Vds Drain Source Breakdown Voltage | - | 40 V | - |
| Id Continuous Drain Current | - | 80 A | - |
| Rds On Drain Source Resistance | - | 6 mOhms | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Pd Power Dissipation | - | 100 W | - |
| Channel Mode | - | Enhancement | - |
| Tradename | - | OptiMOS | - |
| Series | - | OptiMOS-T | - |
| Fall Time | - | 10 ns | - |
| Rise Time | - | 10 ns | - |
| Typical Turn Off Delay Time | - | 20 ns | - |
| Typical Turn On Delay Time | - | 15 ns | - |