IPI032

IPI032N06N3 G vs IPI032N06N3GAKSA1

 
PartNumberIPI032N06N3 GIPI032N06N3GAKSA1
DescriptionMOSFET N-Ch 60V 120A I2PAK-3 OptiMOS 3MOSFET N-Ch 60V 120A I2PAK-3 OptiMOS 3
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleThrough HoleThrough Hole
Package / CaseTO-262-3TO-262-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V
Id Continuous Drain Current120 A120 A
Rds On Drain Source Resistance2.3 mOhms2.3 mOhms
Vgs th Gate Source Threshold Voltage2 V2 V
Vgs Gate Source Voltage20 V20 V
Qg Gate Charge165 nC165 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C
Pd Power Dissipation188 W188 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameOptiMOSOptiMOS
PackagingTubeTube
Height9.45 mm9.45 mm
Length10.2 mm10.2 mm
SeriesOptiMOS 3OptiMOS 3
Transistor Type1 N-Channel1 N-Channel
Width4.5 mm4.5 mm
BrandInfineon TechnologiesInfineon Technologies
Forward Transconductance Min75 S75 S
Fall Time20 ns20 ns
Product TypeMOSFETMOSFET
Rise Time120 ns120 ns
Factory Pack Quantity500500
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time62 ns62 ns
Typical Turn On Delay Time35 ns35 ns
Part # AliasesIPI032N06N3GAKSA1 IPI32N6N3GXK SP000680650G IPI032N06N3 IPI32N6N3GXK SP000680650
Unit Weight0.084199 oz0.084199 oz
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IPI032N06N3 G MOSFET N-Ch 60V 120A I2PAK-3 OptiMOS 3
IPI032N06N3GAKSA1 MOSFET N-Ch 60V 120A I2PAK-3 OptiMOS 3
IPI032N06N3GAKSA1 MOSFET N-CH 60V 120A
IPI032N06N3 G MOSFET N-CH 60V 120A TO262-3
IPI032N06N3G(032N06N) Neu und Original
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