PartNumber | IPI032N06N3 G | IPI032N06N3GAKSA1 |
Description | MOSFET N-Ch 60V 120A I2PAK-3 OptiMOS 3 | MOSFET N-Ch 60V 120A I2PAK-3 OptiMOS 3 |
Manufacturer | Infineon | Infineon |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | Through Hole | Through Hole |
Package / Case | TO-262-3 | TO-262-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 60 V |
Id Continuous Drain Current | 120 A | 120 A |
Rds On Drain Source Resistance | 2.3 mOhms | 2.3 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | 2 V |
Vgs Gate Source Voltage | 20 V | 20 V |
Qg Gate Charge | 165 nC | 165 nC |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C |
Pd Power Dissipation | 188 W | 188 W |
Configuration | Single | Single |
Channel Mode | Enhancement | Enhancement |
Tradename | OptiMOS | OptiMOS |
Packaging | Tube | Tube |
Height | 9.45 mm | 9.45 mm |
Length | 10.2 mm | 10.2 mm |
Series | OptiMOS 3 | OptiMOS 3 |
Transistor Type | 1 N-Channel | 1 N-Channel |
Width | 4.5 mm | 4.5 mm |
Brand | Infineon Technologies | Infineon Technologies |
Forward Transconductance Min | 75 S | 75 S |
Fall Time | 20 ns | 20 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 120 ns | 120 ns |
Factory Pack Quantity | 500 | 500 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 62 ns | 62 ns |
Typical Turn On Delay Time | 35 ns | 35 ns |
Part # Aliases | IPI032N06N3GAKSA1 IPI32N6N3GXK SP000680650 | G IPI032N06N3 IPI32N6N3GXK SP000680650 |
Unit Weight | 0.084199 oz | 0.084199 oz |