 | | |
| PartNumber | IPI037N08N3GXKSA1 | IPI037N08N3GHKSA1 |
| Description | MOSFET N-Ch 80V 100A I2PAK-3 | MOSFET MV POWER MOS |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | - |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-262-3 | TO-262-3 |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 80 V | - |
| Id Continuous Drain Current | 100 A | - |
| Rds On Drain Source Resistance | 3.5 mOhms | - |
| Configuration | Single | - |
| Tradename | OptiMOS | - |
| Packaging | Tube | Tube |
| Height | 9.45 mm | 9.45 mm |
| Length | 10.2 mm | 10.2 mm |
| Series | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | - |
| Width | 4.5 mm | 4.5 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 500 | - |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | G IPI037N08N3 IPI37N8N3GXK SP000680654 | G IPI037N08N3 IPI037N08N3GXK SP000454278 |
| Unit Weight | 0.073511 oz | 0.084199 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPI037N08N3GXKSA1 | MOSFET N-Ch 80V 100A I2PAK-3 | |
| IPI037N08N3GHKSA1 | MOSFET N-CH 80V 100A TO262-3 | ||
| IPI037N08N3GXKSA1 | RF Bipolar Transistors MOSFET N-Ch 80V 100A I2PAK-3 | ||
Infineon Technologies |
IPI037N08N3GHKSA1 | MOSFET MV POWER MOS | |
| IPI037N08N3 | Neu und Original | ||
| IPI037N08N3G | Neu und Original | ||
| IPI037N08N3 G | MOSFET N-Ch 80V 100A I2PAK-3 OptiMOS 3 |