PartNumber | IPI051N15N5AKSA1 | IPI052NE7N3 G | IPI057N08N3 G |
Description | MOSFET | MOSFET N-Ch 75V 80A I2PAK-3 OptiMOS 3 | MOSFET N-Ch 80V 80A I2PAK-3 |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-262-3 | TO-262-3 | TO-262-3 |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 150 V | 75 V | 80 V |
Tradename | OptiMOS | OptiMOS | - |
Packaging | Tube | Tube | Tube |
Height | 9.45 mm | 9.45 mm | 9.45 mm |
Length | 10.2 mm | 10.2 mm | 10.2 mm |
Series | OptiMOS 5 | - | IPI057N08 |
Width | 4.5 mm | 4.5 mm | 4.5 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 500 | 500 | 500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | IPI051N15N5 SP001326440 | IPI052NE7N3GAKSA1 SP000657442 | IPI057N08N3GXKSA1 |
Unit Weight | 0.070548 oz | 0.084199 oz | 0.084199 oz |
Number of Channels | - | 1 Channel | 1 Channel |
Id Continuous Drain Current | - | 80 A | 80 A |
Rds On Drain Source Resistance | - | 5.2 mOhms | 5.7 mOhms |
Vgs Gate Source Voltage | - | 20 V | 20 V |
Qg Gate Charge | - | 51 nC | - |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 175 C | + 175 C |
Pd Power Dissipation | - | 150 W | 150 W |
Configuration | - | Single | Single |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Fall Time | - | 8 nS | 10 ns |
Rise Time | - | 11 ns | 66 ns |
Typical Turn Off Delay Time | - | 30 nS | 38 ns |
Channel Mode | - | - | Enhancement |
Typical Turn On Delay Time | - | - | 18 ns |