 | |  | |
| PartNumber | IPI65R190C6 | IPI65R190C6XKSA1 | IPI65R190C6,65C6190 |
| Description | MOSFET N-Ch 700V 20.2A I2PAK-3 CoolMOS C6 | MOSFET HIGH POWER_LEGACY | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-262-3 | TO-262-3 | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 700 V | - | - |
| Id Continuous Drain Current | 20.2 A | - | - |
| Rds On Drain Source Resistance | 190 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 73 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 151 W | - | - |
| Configuration | Single | - | - |
| Tradename | CoolMOS | CoolMOS | - |
| Packaging | Tube | Tube | - |
| Height | 9.45 mm | 9.45 mm | - |
| Length | 10.2 mm | 10.2 mm | - |
| Series | CoolMOS C6 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.5 mm | 4.5 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 10 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 12 ns | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 133 nS | - | - |
| Part # Aliases | IPI65R190C6XKSA1 IPI65R19C6XK SP000863900 | IPI65R190C6 IPI65R19C6XK SP000863900 | - |
| Unit Weight | 0.084199 oz | 0.084199 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPI65R190C6 | MOSFET N-Ch 700V 20.2A I2PAK-3 CoolMOS C6 | |
| IPI65R190C6XKSA1 | MOSFET N-CH 650V 20.2A TO262 | ||
Infineon Technologies |
IPI65R190C6XKSA1 | MOSFET HIGH POWER_LEGACY | |
| IPI65R190C6,65C6190 | Neu und Original | ||
| IPI65R190C6 | RF Bipolar Transistors MOSFET N-Ch 700V 20.2A I2PAK-3 CoolMOS C6 |