IPP048N0

IPP048N04N G vs IPP048N04NGXKSA1 vs IPP048N06L G

 
PartNumberIPP048N04N GIPP048N04NGXKSA1IPP048N06L G
DescriptionMOSFET N-Ch 40V 70A TO220-3 OptiMOS 3MOSFET N-Ch 40V 70A TO220-3 OptiMOS 3MOSFET N-CH 60V 100A TO-220
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V40 V-
Id Continuous Drain Current70 A70 A-
Rds On Drain Source Resistance4 mOhms4 mOhms-
Vgs th Gate Source Threshold Voltage2 V2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge41 nC41 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation79 W79 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingTubeTube-
Height15.65 mm15.65 mm-
Length10 mm10 mm-
SeriesOptiMOS 3OptiMOS 3-
Transistor Type1 N-Channel1 N-Channel-
Width4.4 mm4.4 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min28 S28 S-
Fall Time4 ns4 ns-
Product TypeMOSFETMOSFET-
Rise Time3.2 ns3.2 ns-
Factory Pack Quantity500500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time19 ns19 ns-
Typical Turn On Delay Time13 ns13 ns-
Part # AliasesIPP048N04NGXKSA1 IPP48N4NGXK SP000648308G IPP048N04N IPP48N4NGXK SP000648308-
Unit Weight0.211644 oz0.211644 oz-
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IPP048N04N G MOSFET N-Ch 40V 70A TO220-3 OptiMOS 3
IPP048N04NGXKSA1 MOSFET N-Ch 40V 70A TO220-3 OptiMOS 3
IPP048N04NGXKSA1 MOSFET N-CH 40V 70A TO220-3
IPP048N06L G MOSFET N-CH 60V 100A TO-220
IPP048N04NG Power Field-Effect Transistor, 70A I(D), 40V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IPP048N06L Neu und Original
IPP048N06LG Neu und Original
Top