IPP08

IPP083N10N5AKSA1 vs IPP080N03L G vs IPP080N06N G

 
PartNumberIPP083N10N5AKSA1IPP080N03L GIPP080N06N G
DescriptionMOSFET N-Ch 100V 73A TO220-3MOSFET N-Ch 30V 50A TO220-3 OptiMOS 3MOSFET N-CH 60V 80A TO-220
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CasePG-TO-220-3TO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V30 V-
Id Continuous Drain Current73 A50 A-
Rds On Drain Source Resistance8.3 mOhms8 mOhms-
Vgs th Gate Source Threshold Voltage2.2 V--
Vgs Gate Source Voltage10 V20 V-
Qg Gate Charge30 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation100 W47 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingTubeTube-
Height15.65 mm15.65 mm-
Length10 mm10 mm-
SeriesOptiMOS 5--
Transistor Type1 N-Channel1 N-Channel-
Width4.4 mm4.4 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min48 S--
Fall Time5 ns2.8 ns-
Product TypeMOSFETMOSFET-
Rise Time5 ns3.6 ns-
Factory Pack Quantity500500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time21 ns18 ns-
Typical Turn On Delay Time13 ns4.6 ns-
Part # AliasesIPP083N10N5 SP001226036IPP080N03LGHKSA1 SP000264166-
Unit Weight0.211644 oz0.211644 oz-
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IPP083N10N5AKSA1 MOSFET N-Ch 100V 73A TO220-3
IPP084N06L3 G MOSFET N-Ch 60V 50A TO220-3
IPP086N10N3 G MOSFET N-Ch 100V 80A TO220-3 OptiMOS 3
IPP083N10N5AKSA1 MOSFET N-CH TO220-3
IPP080N03L G MOSFET N-CH 30V 50A TO220-3
IPP08CN10L G MOSFET N-CH 100V 98A TO220-3
IPP080N06N G MOSFET N-CH 60V 80A TO-220
IPP084N06L3GXKSA1 MOSFET N-CH 60V 50A TO-220-3
IPP086N10N3GXKSA1 MOSFET N-CH 100V 80A TO220-3
IPP084N06L3GHKSA1 MOSFET N-Ch 60V 50A TO220-3
IPP086N10N3GHKSA1 MOSFET N-Ch 100V 80A TO220-3
Infineon Technologies
Infineon Technologies
IPP086N10N3GXKSA1 MOSFET MV POWER MOS
IPP080N03L G MOSFET N-Ch 30V 50A TO220-3 OptiMOS 3
IPP086N10N3GHKSA1 MOSFET N-Ch 100V 80A TO220-3
IPP086N10N3GXK Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: IPP086N10N3GXKSA1)
IPP080N03LG Neu und Original
IPP080N03LGHKSA1 Neu und Original
IPP080N06 Neu und Original
IPP080N06N Neu und Original
IPP080N06N,IPP080N06NG Neu und Original
IPP080N06NG Neu und Original
IPP080N06NG(080N06N) Neu und Original
IPP083N10N5 MOSFET DIFFERENTIATED MOSFETS (Alt: IPP083N10N5)
IPP083N10N5 . Neu und Original
IPP084N06L Neu und Original
IPP084N06L3 Neu und Original
IPP084N06L3G Power Field-Effect Transistor, 50A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IPP084N06L3G(084N06L) Neu und Original
IPP084N06L3G,084N06L,IPP Neu und Original
IPP084N06L3G,IPP084N06L3 Neu und Original
IPP085N06LG Neu und Original
IPP085N06LG(085N06L) Neu und Original
IPP085N06LGAKSA1 Trans MOSFET N-CH 60V 80A 3-Pin TO-220 Tube - Bulk (Alt: IPP085N06LGAKSA1)
IPP086N10 Neu und Original
IPP086N10N3 - Bulk (Alt: IPP086N10N3)
IPP086N10N3,086N10N Neu und Original
IPP086N10N3,086N10N,IPP0 Neu und Original
IPP086N10N3G Power Field-Effect Transistor, 80A I(D), 100V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IPP086N10N3G , 2SD780-DW Neu und Original
IPP086N10N3G HF Neu und Original
IPP086N10N3G(086N10N) Neu und Original
IPP086N10N3G,086N10N,IPP Neu und Original
IPP086N10N3G,IPP086N10N3 Neu und Original
IPP086N10N3G/086N10N Neu und Original
IPP086N10N3GHF Neu und Original
IPP086N10N3GXKSA1 , 2SD7 Neu und Original
IPP08CN10 Neu und Original
IPP08CN10L Neu und Original
IPP08CN10LG Neu und Original
IPP086N10N3 G Darlington Transistors MOSFET N-Ch 100V 80A TO220-3 OptiMOS 3
Top