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IPP086N10N3 G

IPP086N10N3 G
Mfr. #:
IPP086N10N3 G
Hersteller:
Infineon Technologies
Beschreibung:
Darlington Transistors MOSFET N-Ch 100V 80A TO220-3 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPP086N10N3 G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
INFINEON
Produktkategorie
FETs - Einzeln
Serie
OptiMOS 3
Verpackung
Rohr
Teil-Aliasnamen
IPP086N10N3GXK IPP086N10N3GXKSA1 SP000680840
Gewichtseinheit
0.211644 oz
Montageart
Durchgangsloch
Handelsname
OptiMOS
Paket-Koffer
TO-220-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
125 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
8 ns
Anstiegszeit
42 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
80 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Rds-On-Drain-Source-Widerstand
8.2 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
31 ns
Typische-Einschaltverzögerungszeit
18 ns
Kanal-Modus
Erweiterung
Tags
IPP086N10N3G, IPP086N10N, IPP086, IPP08, IPP0, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
IPP086N10N3GXKSA1
DISTI # IPP086N10N3GXKSA1-ND		Infineon Technologies AGMOSFET N-CH 100V 80A TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube		940In Stock
  • 1000:$0.9148
  • 500:$1.0839
  • 100:$1.3658
  • 10:$1.6760
  • 1:$1.8500
IPP086N10N3GHKSA1
DISTI # IPP086N10N3GHKSA1-ND		Infineon Technologies AGMOSFET N-CH 100V 80A TO220-3
RoHS: Compliant
Min Qty: 500
Container: Tube		Limited Supply - Call
    IPP086N10N3GXK
    DISTI # SP000680840    		Infineon Technologies AGTrans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220 Tube (Alt: SP000680840)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 3500
    • 1:€0.9089
    • 10:€0.8079
    • 25:€0.7269
    • 50:€0.6609
    • 100:€0.6059
    • 500:€0.5589
    • 1000:€0.5189
    IPP086N10N3 G
    DISTI # IPP086N10N3 G    		Infineon Technologies AGTrans MOSFET N-CH 100V 80A 3-Pin TO-220 Tube (Alt: IPP086N10N3 G)
    RoHS: Compliant
    Min Qty: 500
    Container: Tube    		Asia - 0
      IPP086N10N3 G
      DISTI # SP000680840      		Infineon Technologies AGTrans MOSFET N-CH 100V 80A 3-Pin TO-220 Tube (Alt: SP000680840)
      RoHS: Compliant
      Min Qty: 1
      Container: Tube      		Europe - 0
      • 1:€0.9629
      • 10:€0.8079
      • 25:€0.6749
      • 50:€0.5879
      • 100:€0.5759
      • 500:€0.5609
      • 1000:€0.5509
      IPP086N10N3GXK
      DISTI # IPP086N10N3GXKSA1      		Infineon Technologies AGTrans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: IPP086N10N3GXKSA1)
      RoHS: Compliant
      Min Qty: 1000
      Container: Tube      		Americas - 0
      • 1000:$0.5899
      • 2000:$0.5689
      • 3000:$0.5479
      • 5000:$0.5299
      • 10000:$0.5199
      IPP086N10N3GXKSA1
      DISTI # 12AC9726      		Infineon Technologies AGMOSFET, N-CH, 100V, 80A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0074ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,Power RoHS Compliant: Yes393
      • 1:$2.0100
      • 10:$1.8200
      • 100:$1.5000
      • 500:$1.1900
      • 1000:$1.0100
      IPP086N10N3 G
      DISTI # 726-IPP086N10N3G      		Infineon Technologies AGMOSFET N-Ch 100V 80A TO220-3 OptiMOS 3
      RoHS: Compliant      		2481
      • 1:$1.5100
      • 10:$1.2900
      • 100:$1.0300
      • 500:$0.8970
      IPP086N10N3GHKSA1
      DISTI # 726-IPP086N10N3GHKSA      		Infineon Technologies AGMOSFET N-Ch 100V 80A TO220-3
      RoHS: Compliant      		0
        IPP086N10N3GInfineon Technologies AGPower Field-Effect Transistor, 80A I(D), 100V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
        RoHS: Compliant        		150
        • 1000:$0.6700
        • 500:$0.7100
        • 100:$0.7400
        • 25:$0.7700
        • 1:$0.8300
        IPP086N10N3GXKSA1
        DISTI # 8922157P        		Infineon Technologies AGMOSFET N-CHANNEL 100V 80A OPTIMOS TO220, TU110
        • 50:£1.0300
        • 100:£0.7960
        IPP086N10N3GXKSA1
        DISTI # IPP086N10N3GXKSA1        		Infineon Technologies AGTransistor: N-MOSFET,unipolar,100V,80A,125W,PG-TO220-3523
        • 1:$1.2422
        • 5:$1.0692
        • 25:$0.8593
        • 250:$0.7455
        • 1000:$0.6943
        IPP086N10N3GXKSA1
        DISTI # 2709893        		Infineon Technologies AGMOSFET, N-CH, 100V, 80A, TO-220
        RoHS: Compliant        		393
        • 1:$2.6300
        • 10:$2.2900
        • 100:$1.8700
        IPP086N10N3GInfineon Technologies AG100V,80A,N Channel Power MOSFET30
        • 1:$1.1800
        • 100:$0.9900
        • 500:$0.8700
        • 1000:$0.8500
        IPP086N10N3GXKSA1
        DISTI # XSKDRABS0006532        		Infineon Technologies AG 
        RoHS: Compliant        		2520
        • 500:$0.9839
        • 2520:$0.9183
        IPP086N10N3GXKSA1
        DISTI # 2709893        		Infineon Technologies AGMOSFET, N-CH, 100V, 80A, TO-220
        RoHS: Compliant        		913
        • 5:£1.3000
        • 25:£1.0100
        • 100:£0.8040
        • 250:£0.7790
        • 500:£0.7540
        Bild Teil # Beschreibung
        IPP086N10N3GHKSA1

        Mfr.#: IPP086N10N3GHKSA1

        OMO.#: OMO-IPP086N10N3GHKSA1

        		 MOSFET N-Ch 100V 80A TO220-3
        IPP086N10N3GXK

        Mfr.#: IPP086N10N3GXK

        OMO.#: OMO-IPP086N10N3GXK-1190

        		 Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: IPP086N10N3GXKSA1)
        IPP086N10

        Mfr.#: IPP086N10

        OMO.#: OMO-IPP086N10-1190

        		 Neu und Original
        IPP086N10N3

        Mfr.#: IPP086N10N3

        OMO.#: OMO-IPP086N10N3-1190

        		 - Bulk (Alt: IPP086N10N3)
        IPP086N10N3,086N10N

        Mfr.#: IPP086N10N3,086N10N

        OMO.#: OMO-IPP086N10N3-086N10N-1190

        		 Neu und Original
        IPP086N10N3G

        Mfr.#: IPP086N10N3G

        OMO.#: OMO-IPP086N10N3G-1190

        		 Power Field-Effect Transistor, 80A I(D), 100V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
        IPP086N10N3G , 2SD780-DW

        Mfr.#: IPP086N10N3G , 2SD780-DW

        OMO.#: OMO-IPP086N10N3G-2SD780-DW-1190

        		 Neu und Original
        IPP086N10N3G/086N10N

        Mfr.#: IPP086N10N3G/086N10N

        OMO.#: OMO-IPP086N10N3G-086N10N-1190

        		 Neu und Original
        IPP086N10N3GHF

        Mfr.#: IPP086N10N3GHF

        OMO.#: OMO-IPP086N10N3GHF-1190

        		 Neu und Original
        IPP086N10N3 G

        Mfr.#: IPP086N10N3 G

        OMO.#: OMO-IPP086N10N3-G-124

        		 Darlington Transistors MOSFET N-Ch 100V 80A TO220-3 OptiMOS 3
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        5000
        Menge eingeben:
        Der aktuelle Preis von IPP086N10N3 G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        0,83 $
        0,83 $
        10
        0,78 $
        7,85 $
        100
        0,74 $
        74,35 $
        500
        0,70 $
        351,10 $
        1000
        0,66 $
        660,90 $
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