 | | | |
| PartNumber | IPP086N10N3 G | IPP086N10N3GXKSA1 | IPP086N10N3GHKSA1 |
| Description | MOSFET N-Ch 100V 80A TO220-3 OptiMOS 3 | MOSFET MV POWER MOS | MOSFET N-Ch 100V 80A TO220-3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | - | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | - | 100 V |
| Id Continuous Drain Current | 80 A | - | 80 A |
| Rds On Drain Source Resistance | 8.2 mOhms | - | 8.2 mOhms |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 125 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Tube | Tube | Tube |
| Height | 15.65 mm | 15.65 mm | 15.65 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 4.4 mm | 4.4 mm | 4.4 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 8 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 42 ns | - | - |
| Factory Pack Quantity | 500 | - | 500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 31 ns | - | - |
| Typical Turn On Delay Time | 18 ns | - | - |
| Part # Aliases | IPP086N10N3GXKSA1 IPP86N1N3GXK SP000680840 | G IPP086N10N3 IPP86N1N3GXK SP000680840 | IPP086N10N3 IPP086N10N3GXK SP000485980 |
| Unit Weight | 0.211644 oz | 0.211644 oz | 0.211644 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP086N10N3 G | MOSFET N-Ch 100V 80A TO220-3 OptiMOS 3 | |
| IPP086N10N3GXKSA1 | MOSFET N-CH 100V 80A TO220-3 | ||
| IPP086N10N3GHKSA1 | MOSFET N-Ch 100V 80A TO220-3 | ||
Infineon Technologies |
IPP086N10N3GXKSA1 | MOSFET MV POWER MOS | |
| IPP086N10N3GHKSA1 | MOSFET N-Ch 100V 80A TO220-3 | ||
| IPP086N10N3GXK | Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: IPP086N10N3GXKSA1) | ||
| IPP086N10 | Neu und Original | ||
| IPP086N10N3 | - Bulk (Alt: IPP086N10N3) | ||
| IPP086N10N3,086N10N | Neu und Original | ||
| IPP086N10N3,086N10N,IPP0 | Neu und Original | ||
| IPP086N10N3G | Power Field-Effect Transistor, 80A I(D), 100V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| IPP086N10N3G , 2SD780-DW | Neu und Original | ||
| IPP086N10N3G HF | Neu und Original | ||
| IPP086N10N3G(086N10N) | Neu und Original | ||
| IPP086N10N3G,086N10N,IPP | Neu und Original | ||
| IPP086N10N3G,IPP086N10N3 | Neu und Original | ||
| IPP086N10N3G/086N10N | Neu und Original | ||
| IPP086N10N3GHF | Neu und Original | ||
| IPP086N10N3GXKSA1 , 2SD7 | Neu und Original | ||
| IPP086N10N3 G | Darlington Transistors MOSFET N-Ch 100V 80A TO220-3 OptiMOS 3 |