IPP12

IPP12CN10L G vs IPP126N10N3 G vs IPP126N10N3GXKSA1

 
PartNumberIPP12CN10L GIPP126N10N3 GIPP126N10N3GXKSA1
DescriptionMOSFET N-Ch 100V 69A TO220-3 OptiMOS 2MOSFET N-Ch 100V 58A TO220-3 OptiMOS 3MOSFET N-Ch 100V 58A TO220-3 OptiMOS 3
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3TO-220-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V100 V100 V
Id Continuous Drain Current69 A58 A58 A
Rds On Drain Source Resistance9.9 mOhms11 mOhms11 mOhms
Vgs th Gate Source Threshold Voltage1.2 V2 V2 V
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge58 nC35 nC35 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
Pd Power Dissipation125 W94 W94 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameOptiMOSOptiMOSOptiMOS
PackagingTubeTubeTube
Height15.65 mm15.65 mm15.65 mm
Length10 mm10 mm10 mm
SeriesOptiMOS 2OptiMOS 3OptiMOS 3
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width4.4 mm4.4 mm4.4 mm
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Forward Transconductance Min57 S29 S29 S
Fall Time5 ns5 ns5 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time9 ns8 ns8 ns
Factory Pack Quantity500500500
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time39 ns24 ns24 ns
Typical Turn On Delay Time14 ns14 ns14 ns
Part # AliasesIPP12CN10LGXKSA1 IPP12CN1LGXK SP000680864IPP126N10N3GXKSA1 IPP126N1N3GXK SP000683088G IPP126N10N3 IPP126N1N3GXK SP000683088
Unit Weight0.211644 oz0.211644 oz0.211644 oz
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IPP12CN10L G MOSFET N-Ch 100V 69A TO220-3 OptiMOS 2
IPP126N10N3 G MOSFET N-Ch 100V 58A TO220-3 OptiMOS 3
IPP126N10N3GXKSA1 MOSFET N-Ch 100V 58A TO220-3 OptiMOS 3
IPP12CN10LGXKSA1 MOSFET N-Ch 100V 69A TO220-3 OptiMOS 2
IPP126N10N3GXKSA1 MOSFET N-CH 100V 58A TO220-3
IPP12CNE8N G MOSFET N-CH 85V 67A TO-220
IPP12CN10N G MOSFET N-CH 100V 67A TO-220
IPP12CN10NGXKSA1 MOSFET N-CH 100V 67A TO-220
Infineon Technologies
Infineon Technologies
IPP12CNE8N G MOSFET N-Ch 85V 67A TO220-3
IPP12CN10N G MOSFET N-Ch 100V 67A TO220-3
IPP126N10N3G Trans MOSFET N-CH 100V 58A 3-Pin TO-220 Tube (Alt: SP000683088)
IPP12CN10LGXK Trans MOSFET N-CH 100V 69A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: IPP12CN10LGXKSA1)
IPP126N10N3GXK Trans MOSFET N-CH 100V 58A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: IPP126N10N3GXKSA1)
IPP126N10N Neu und Original
IPP126N10N3,126N10N Neu und Original
IPP126N10N3G,126N10N Neu und Original
IPP126N10N3G,126N10N,IPP Neu und Original
IPP126N10N3G,126N10N3 Neu und Original
IPP126N10N3G,IPP126N10N3 Neu und Original
IPP126N10N3G,IPP126N10N3,IPP16CNE8N, Neu und Original
IPP126N10N3GXKSA1 , 2SD8 Neu und Original
IPP12CN10L G,12CN10L,IPP Neu und Original
IPP12CN10LG Trans MOSFET N-CH 100V 69A 3-Pin(3+Tab) TO-220
IPP12CN10LG,IPP10CN10NG, Neu und Original
IPP12CN10LG,IPP10CN10NG,IPP126N10N3G,12CN10, Neu und Original
IPP12CN10LG,IPP12CN10L G Neu und Original
IPP12CN10LG,IPP12CN10NG, Neu und Original
IPP12CN10LGXKSA1 , 2SD81 Neu und Original
IPP12CN10N Neu und Original
IPP12CN10NG POWER FIELD-EFFECT TRANSISTOR, 67A I(D), 100V, 0.0129OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB
IPP12CNE8N Neu und Original
IPP12CNE8NG Neu und Original
IPP12CN10L G Darlington Transistors MOSFET N-Ch 100V 69A TO220-3 OptiMOS 2
IPP126N10N3 G Darlington Transistors MOSFET N-Ch 100V 58A TO220-3 OptiMOS 3
IPP12CN10LGHKSA1 MOSFET N-Ch 100V 69A TO220-3
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