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| PartNumber | IPP65R190E6XKSA1 |
| Description | MOSFET N-Ch 700V 20.2A TO220-3 |
| Manufacturer | Infineon |
| Product Category | MOSFET |
| RoHS | Y |
| Technology | Si |
| Mounting Style | Through Hole |
| Package / Case | TO-220-3 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V |
| Id Continuous Drain Current | 20.2 A |
| Rds On Drain Source Resistance | 170 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.5 V |
| Vgs Gate Source Voltage | 20 V |
| Qg Gate Charge | 73 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd Power Dissipation | 151 W |
| Configuration | Single |
| Channel Mode | Enhancement |
| Tradename | CoolMOS |
| Packaging | Tube |
| Height | 15.65 mm |
| Length | 10 mm |
| Series | CoolMOS E6 |
| Transistor Type | 1 N-Channel |
| Width | 4.4 mm |
| Brand | Infineon Technologies |
| Fall Time | 10 ns |
| Product Type | MOSFET |
| Rise Time | 11 ns |
| Factory Pack Quantity | 500 |
| Subcategory | MOSFETs |
| Typical Turn Off Delay Time | 112 ns |
| Typical Turn On Delay Time | 12 ns |
| Part # Aliases | IPP65R190E6 IPP65R19E6XK SP000849876 |
| Unit Weight | 0.211644 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP65R190E6XKSA1 | MOSFET N-Ch 700V 20.2A TO220-3 | |
| IPP65R190E6XKSA1 | RF Bipolar Transistors MOSFET N-Ch 700V 20.2A TO220-3 |