 | | |
| PartNumber | IPW60R120C7XKSA1 | IPW60R120P7XKSA1 |
| Description | MOSFET HIGH POWER_NEW | MOSFET HIGH POWER_NEW |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V |
| Tradename | CoolMOS | CoolMOS |
| Packaging | Tube | Tube |
| Height | 21.1 mm | - |
| Length | 16.13 mm | - |
| Series | CoolMOS C7 | CoolMOS P7 |
| Width | 5.21 mm | - |
| Brand | Infineon Technologies | Infineon Technologies |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 240 | 240 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | IPW60R120C7 SP001385060 | IPW60R120P7 SP001658382 |
| Unit Weight | 0.211644 oz | 0.211644 oz |
| Number of Channels | - | 1 Channel |
| Transistor Polarity | - | N-Channel |
| Id Continuous Drain Current | - | 26 A |
| Rds On Drain Source Resistance | - | 100 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 3 V |
| Vgs Gate Source Voltage | - | 20 V |
| Qg Gate Charge | - | 36 nC |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Pd Power Dissipation | - | 95 W |
| Configuration | - | Single |
| Channel Mode | - | Enhancement |
| Transistor Type | - | 1 N-Channel |
| Fall Time | - | 6 ns |
| Rise Time | - | 14 ns |
| Typical Turn Off Delay Time | - | 81 ns |
| Typical Turn On Delay Time | - | 21 ns |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPW60R120C7XKSA1 | MOSFET HIGH POWER_NEW | |
| IPW60R120P7XKSA1 | MOSFET N-CH 600V 26A TO247-3 | ||
| IPW60R120C7XKSA1 | MOSFET N-CH 600V 19A TO247-3 | ||
Infineon Technologies |
IPW60R120P7XKSA1 | MOSFET HIGH POWER_NEW | |
| IPW60R120C7 | Neu und Original |