IRF2807ZS

IRF2807ZSTRLPBF vs IRF2807ZSPBF vs IRF2807ZS

 
PartNumberIRF2807ZSTRLPBFIRF2807ZSPBFIRF2807ZS
DescriptionMOSFET MOSFT 75V 89A 9.4mOhm 71nCMOSFET 75V 1 N-CH HEXFET 9.4mOhms 71nCMOSFET N-CH 75V 75A D2PAK
ManufacturerInfineonInfineonIR
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage75 V75 V-
Id Continuous Drain Current89 A89 A-
Rds On Drain Source Resistance9.4 mOhms9.4 mOhms-
Vgs th Gate Source Threshold Voltage4 V4 V-
Qg Gate Charge110 nC71 nC-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation170 W170 W-
ConfigurationSingleSingle-
PackagingReelTube-
Height4.4 mm4.4 mm-
Length10 mm10 mm-
Transistor Type1 N-Channel1 N-Channel-
Width9.25 mm9.25 mm-
BrandInfineon TechnologiesInfineon / IR-
Forward Transconductance Min67 S67 S-
Fall Time45 ns45 ns-
Product TypeMOSFETMOSFET-
Rise Time79 ns79 ns-
Factory Pack Quantity8001000-
SubcategoryMOSFETsMOSFETs-
Part # AliasesSP001564328SP001564678-
Unit Weight0.139332 oz0.139332 oz-
Vgs Gate Source Voltage-20 V-
Minimum Operating Temperature-- 55 C-
Channel Mode-Enhancement-
Type-HEXFET Power MOSFET-
Typical Turn Off Delay Time-40 ns-
Typical Turn On Delay Time-18 ns-
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IRF2807ZSTRLPBF MOSFET MOSFT 75V 89A 9.4mOhm 71nC
IRF2807ZSTRRPBF MOSFET N-CH 75V 75A D2PAK
IRF2807ZS MOSFET N-CH 75V 75A D2PAK
IRF2807ZSPBF Darlington Transistors MOSFET 75V 1 N-CH HEXFET 9.4mOhms 71nC
IRF2807ZSTRLPBF IGBT Transistors MOSFET MOSFT 75V 89A 9.4mOhm 71nC
Infineon / IR
Infineon / IR
IRF2807ZSPBF MOSFET 75V 1 N-CH HEXFET 9.4mOhms 71nC
IRF2807ZSTRRPBF MOSFET 75V 1 N-CH HEXFET 9.4mOhms 71nC
Vishay
Vishay
IRF2807ZSTRL MOSFET N-CH 75V 75A D2PAK
IRF2807ZSTRR MOSFET N-CH 75V 75A D2PAK
Top