![]() | |||
| PartNumber | IRF3711ZSPBF | IRF3717PBF | IRF3711ZTRL |
| Description | MOSFET 20V 1 N-CH HEXFET 6mOhms 5.3nC | MOSFET 20V 1 N-CH HEXFET 4.4mOhms 22nC | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | SO-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | - |
| Id Continuous Drain Current | 92 A | 20 A | - |
| Rds On Drain Source Resistance | 7.3 mOhms | 5.7 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 16 nC | 22 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 150 C | - |
| Pd Power Dissipation | 79 W | 2.5 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Tube | - |
| Height | 4.4 mm | 1.75 mm | - |
| Length | 10 mm | 4.9 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | HEXFET Power MOSFET | HEXFET Power MOSFET | - |
| Width | 9.25 mm | 3.9 mm | - |
| Brand | Infineon / IR | Infineon Technologies | - |
| Fall Time | 5.4 ns | 6 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 16 ns | 14 ns | - |
| Factory Pack Quantity | 50 | 3800 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 15 ns | 15 ns | - |
| Typical Turn On Delay Time | 12 ns | 12 ns | - |
| Part # Aliases | SP001561710 | SP001564392 | - |
| Unit Weight | 0.139332 oz | 0.019048 oz | - |