IRF3710ST

IRF3710STRLPBF vs IRF3710STRRPBF vs IRF3710STRR

 
PartNumberIRF3710STRLPBFIRF3710STRRPBFIRF3710STRR
DescriptionMOSFET MOSFT 100V 57A 23mOhm 86.7nCMOSFET 100V 1 N-CH HEXFET 23mOhms 86.7nCMOSFET N-CH 100V 57A D2PAK
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3D2PAK-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current57 A57 A-
Rds On Drain Source Resistance23 mOhms23 mOhms-
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge130 nC86.7 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation200 W3.8 W-
ConfigurationSingleSingle-
PackagingReelReel-
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm6.22 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min32 S--
Fall Time47 ns47 ns-
Product TypeMOSFETMOSFET-
Rise Time58 ns58 ns-
Factory Pack Quantity800800-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time45 ns45 ns-
Typical Turn On Delay Time12 ns12 ns-
Part # AliasesSP001553984SP001561740-
Unit Weight0.139332 oz0.139332 oz-
Channel Mode-Enhancement-
Type-HEXFET Power MOSFET-
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IRF3710STRLPBF MOSFET MOSFT 100V 57A 23mOhm 86.7nC
IRF3710STRRPBF MOSFET 100V 1 N-CH HEXFET 23mOhms 86.7nC
IRF3710STRR MOSFET N-CH 100V 57A D2PAK
IRF3710STRLPBF MOSFET N-CH 100V 57A D2PAK
IRF3710STRRPBF MOSFET N-CH 100V 57A D2PAK
IRF3710STRLPBF AOB298L Neu und Original
IRF3710STRLPBF-CUT TAPE Neu und Original
IRF3710STRRPBF-CUT TAPE Neu und Original
IRF3710STR Neu und Original
IRF3710STRLPBF,IRF3710ZS Neu und Original
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