PartNumber | IRF3710STRLPBF | IRF3710STRRPBF | IRF3710STRR |
Description | MOSFET MOSFT 100V 57A 23mOhm 86.7nC | MOSFET 100V 1 N-CH HEXFET 23mOhms 86.7nC | MOSFET N-CH 100V 57A D2PAK |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-252-3 | D2PAK-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
Id Continuous Drain Current | 57 A | 57 A | - |
Rds On Drain Source Resistance | 23 mOhms | 23 mOhms | - |
Vgs th Gate Source Threshold Voltage | 4 V | - | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 130 nC | 86.7 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 200 W | 3.8 W | - |
Configuration | Single | Single | - |
Packaging | Reel | Reel | - |
Height | 2.3 mm | 2.3 mm | - |
Length | 6.5 mm | 6.5 mm | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 6.22 mm | 6.22 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 32 S | - | - |
Fall Time | 47 ns | 47 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 58 ns | 58 ns | - |
Factory Pack Quantity | 800 | 800 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 45 ns | 45 ns | - |
Typical Turn On Delay Time | 12 ns | 12 ns | - |
Part # Aliases | SP001553984 | SP001561740 | - |
Unit Weight | 0.139332 oz | 0.139332 oz | - |
Channel Mode | - | Enhancement | - |
Type | - | HEXFET Power MOSFET | - |