 | | | |
| PartNumber | IRF540ZSTRL | IRF540ZS | IRF540ZSPBF |
| Description | MOSFET N-CH 100V 36A D2PAK | MOSFET N-CH 100V 36A D2PAK | Darlington Transistors MOSFET 100V 1 N-CH HEXFET 26.5mOhms 42nC |
| Manufacturer | - | IR | IR |
| Product Category | - | FETs - Single | FETs - Single |
| Packaging | - | Tube | Tube |
| Unit Weight | - | 0.139332 oz | 0.139332 oz |
| Mounting Style | - | SMD/SMT | SMD/SMT |
| Package Case | - | TO-252-3 | TO-252-3 |
| Technology | - | Si | Si |
| Number of Channels | - | 1 Channel | 1 Channel |
| Configuration | - | Single | Single |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Pd Power Dissipation | - | 92 W | 92 W |
| Maximum Operating Temperature | - | + 175 C | + 175 C |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Fall Time | - | 39 ns | 39 ns |
| Rise Time | - | 51 ns | 51 ns |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Id Continuous Drain Current | - | 36 A | 36 A |
| Vds Drain Source Breakdown Voltage | - | 100 V | 100 V |
| Rds On Drain Source Resistance | - | 26.5 mOhms | 26.5 mOhms |
| Transistor Polarity | - | N-Channel | N-Channel |
| Typical Turn Off Delay Time | - | 43 ns | 43 ns |
| Typical Turn On Delay Time | - | 15 ns | 15 ns |
| Qg Gate Charge | - | 42 nC | 42 nC |
| Channel Mode | - | Enhancement | Enhancement |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon / IR |
IRF540ZSTRLPBF | MOSFET MOSFT 100V 36A 26.5mOhm 42nC Qg | |
| IRF540ZSTRRPBF | MOSFET 100V 1 N-CH HEXFET 26.5mOhms 42nC | ||
| IRF540ZSTRLPBF-CUT TAPE | Neu und Original | ||
Infineon Technologies |
IRF540ZSTRL | MOSFET N-CH 100V 36A D2PAK | |
| IRF540ZSTRR | MOSFET N-CH 100V 36A D2PAK | ||
| IRF540ZS | MOSFET N-CH 100V 36A D2PAK | ||
| IRF540ZSPBF | Darlington Transistors MOSFET 100V 1 N-CH HEXFET 26.5mOhms 42nC | ||
| IRF540ZSTRLPBF | Darlington Transistors MOSFET MOSFT 100V 36A 26.5mOhm 42nC Qg | ||
| IRF540ZSTRRPBF | RF Bipolar Transistors MOSFET 100V 1 N-CH HEXFET 26.5mOhms 42nC |