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IRF540ZSPBF

IRF540ZSPBF
Mfr. #:
IRF540ZSPBF
Hersteller:
Infineon Technologies
Beschreibung:
Darlington Transistors MOSFET 100V 1 N-CH HEXFET 26.5mOhms 42nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF540ZSPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF540ZSPBF DatasheetIRF540ZSPBF Datasheet (P4-P6)IRF540ZSPBF Datasheet (P7-P9)IRF540ZSPBF Datasheet (P10-P12)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
IR
Produktkategorie
FETs - Einzeln
Verpackung
Rohr
Gewichtseinheit
0.139332 oz
Montageart
SMD/SMT
Paket-Koffer
TO-252-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
92 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
39 ns
Anstiegszeit
51 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
36 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Rds-On-Drain-Source-Widerstand
26.5 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
43 ns
Typische-Einschaltverzögerungszeit
15 ns
Qg-Gate-Ladung
42 nC
Kanal-Modus
Erweiterung
Tags
IRF540ZS, IRF540Z, IRF540, IRF54, IRF5, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
IRF540xx Series 100 V 26.5 mOhm 36 A HEXFET® Power MOSFET - D²PAK (TO-263AB)
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a D2Pak package, D2PAK-3, RoHS
***ical
Trans MOSFET N-CH Si 100V 36A 3-Pin(2+Tab) D2PAK T/R
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 92 W
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
***(Formerly Allied Electronics)
MOSFET, Power,N-Ch,VDSS 100V,RDS(ON) 21 Milliohms,ID 36A,D2Pak,PD 92W,VGS +/-20V
***roFlash
Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N-CH, 100V, 36A, TO-263AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 36A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.021ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Po
***(Formerly Allied Electronics)
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.036Ohm; ID 42A; D2Pak; PD 160W; VGS +/-20V
***ponent Sense
Single N-Channel 100 V 160 W 110 nC Hexfet Power Mosfet Surface Mount - D2PAK
*** Source Electronics
Trans MOSFET N-CH 100V 42A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 100V 42A D2PAK
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 3.8 W
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0805 1.0uF 35volts *Derate Voltage/Temp
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:42A; On Resistance Rds(On):0.036Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
***icroelectronics
N-Channel 100V - 0.030 Ohm - 40A - D2PAK LOW GATE CHARGE StripFET(TM) POWER MOSFET
***ical
Trans MOSFET N-CH 100V 40A 3-Pin(2+Tab) D2PAK T/R
***nell
MOSFET, N CH, 100V, 40A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 17.5A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.03ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 115W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 40A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 100V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
***eco
Transistor MOSFET N Channel 100 Volt 33 Amp 3-Pin 2+ Tab D2pak Tape And Reel
***(Formerly Allied Electronics)
MOSFET; Power; N-Ch; VDSS 100V; RDS(ON) 44Milliohms; ID 33A; D2Pak; PD 130W; VGS+/-20V
***ure Electronics
Single N-Channel 100 V 44 mOhm 71nC HEXFET® Power Mosfet - D2PAK
***fin
Transistor NPN Mos IRF540/IRF540NS INTERNATIONAL RECTIFIER Ampere=28 V=100 TO220
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***essParts.Net
INTERNATIONAL RECTIFIER IRF540NS / MOSFET N-CH 100V 33A D2PAK ITE
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 3.8 W
***ment14 APAC
N CHANNEL MOSFET, 100V, 33A, D2-PAK; TRA; Transistor Polarity:N Channel; Continuous Drain Current Id:33A;
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***nell
MOSFET, N CH, 100V, 33A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 33A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.044ohm; Available until stocks are exhausted Alternative available
***ark
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:33A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:130W; No. of Pins:3Pins RoHS Compliant: Yes
***ure Electronics
Single N-Channel 100 V 77 mOhms Surface Mount Power Mosfet - D2PAK-3
***ical
Trans MOSFET N-CH 100V 28A 3-Pin(2+Tab) D2PAK
***nell
MOSFET, N, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 28A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.077ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation
***roFlash
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***eco
Transistor MOSFET N Channel 100 Volt 33 Amp 3-Pin 2+ Tab D2pak Tape And Reel
***emi
N-Channel Power MOSFET, QFET®, 100 V, 33 A, 52 mΩ, D2PAK
***ure Electronics
N-Channel 100 V 52 mOhm Surface Mount Mosfet - D2PAK-3
***enic
100V 33A 127W 52m´Î@10V16.5A 4V@250Ã×A N Channel D2PAK¨×TO-263AB¨Ø MOSFETs ROHS
*** Stop Electro
Power Field-Effect Transistor, 33A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:33A; On Resistance, Rds(on):0.052ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:100V; On Resistance Rds(on):40mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:127W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:33A; Package / Case:D2-PAK; Power Dissipation Pd:127W; Power Dissipation Pd:127W; Pulse Current Idm:132A; Rate of Voltage Change dv / dt:6V/ns; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***icroelectronics
N-CHANNEL 100V 0.028 OHM 40A D2PAK LOW GATE CHARGE STripFET MOSFET
***ure Electronics
N-channel 100 V 0.033 Ohm Surface Mount STripFET™ II Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 100V 40A 3-Pin(2+Tab) D2PAK T/R
***nell
MOSFET, N CH, 100V, 40A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.028ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Pow
***emi
N-Channel Power MOSFET, Logic Level, QFET®, 100 V, 33 A, 52 mΩ, D2PAK
***ure Electronics
N Channel 100 V 52 mO 3.75 W QFET Mosfet Surface Mount - D2PAK-3
***ical
Trans MOSFET N-CH 100V 33A 3-Pin (2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 33A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N CH, 100V, 33A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 33A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.039ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 127W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***icroelectronics
N-CHANNEL 100V 0.038 OHM 35A D2PAK LOW GATE CHARGE STripFET II MOSFET
***ure Electronics
N-Channel 100 V 0.045 Ohm Surface Mount STripFET II MosFet - D2PAK
***ical
Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) D2PAK T/R
***ark
MOSFET, N CHANNEL, 100V, 35A, D2PAK; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:15A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N CH, 100V, 35A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 15A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 115W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 35A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 100V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
Teil # Mfg. Beschreibung Aktie Preis
IRF540ZSPBF
DISTI # V36:1790_13889618		Infineon Technologies AGTrans MOSFET N-CH Si 100V 36A 3-Pin(2+Tab) D2PAK Tube
RoHS: Compliant		979
  • 100:$1.1415
  • 25:$1.2365
  • 10:$1.3950
  • 1:$1.5923
IRF540ZSPBF
DISTI # IRF540ZSPBF-ND		Infineon Technologies AGMOSFET N-CH 100V 36A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Tube		Limited Supply - Call
    IRF540ZSPBF
    DISTI # 29555610    		Infineon Technologies AGTrans MOSFET N-CH Si 100V 36A 3-Pin(2+Tab) D2PAK Tube
    RoHS: Compliant    		979
    • 100:$1.1415
    • 25:$1.2365
    • 10:$1.3950
    • 9:$1.5923
    IRF540ZSPBF
    DISTI # 70018224    		Infineon Technologies AGIRF540ZSPBF N-channel MOSFET Transistor,36 A,100 V,3-Pin D2PAK
    RoHS: Compliant    		0
    • 750:$2.2400
    • 1500:$1.9700
    IRF540ZSPBF
    DISTI # 942-IRF540ZSPBF    		Infineon Technologies AGMOSFET 100V 1 N-CH HEXFET 26.5mOhms 42nC
    RoHS: Compliant    		0
      IRF540ZSPBFInternational RectifierMOSFET Transistor, N-Channel, TO-263AB63
      • 44:$1.0500
      • 13:$1.7500
      • 1:$2.8000
      IRF540ZSPBFInternational Rectifier 
      RoHS: Compliant      		Europe - 126
        IRF540ZSTRLPBF
        DISTI # IRF540ZSPBF-GURT        		Infineon Technologies AGN-Ch 100V 36A 92W 0,0265R DPak
        RoHS: Compliant        		0
        • 10:€0.6860
        • 50:€0.4160
        • 200:€0.3260
        • 500:€0.3140
        IRF540ZSPBF
        DISTI # C1S322000519145        		Infineon Technologies AGMOSFETs979
        • 100:$1.1415
        • 25:$1.2365
        • 10:$1.3950
        • 1:$1.5923
        IRF540ZSPBF
        DISTI # 8657700        		Infineon Technologies AGMOSFET, N, 100V, 36A, D2-PAK
        RoHS: Compliant        		0
        • 1:$1.9800
        • 10:$1.7700
        • 100:$1.3800
        • 500:$1.1400
        Bild Teil # Beschreibung
        IRF540ZLPBF

        Mfr.#: IRF540ZLPBF

        OMO.#: OMO-IRF540ZLPBF

        		 MOSFET 100V 1 N-CH HEXFET 26.5mOhms 42nC
        IRF540STRR

        Mfr.#: IRF540STRR

        OMO.#: OMO-IRF540STRR-VISHAY

        		 MOSFET N-CH 100V 28A D2PAK
        IRF540ZSTRR

        Mfr.#: IRF540ZSTRR

        OMO.#: OMO-IRF540ZSTRR-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 100V 36A D2PAK
        IRF540ATM

        Mfr.#: IRF540ATM

        OMO.#: OMO-IRF540ATM-1190

        		 Neu und Original
        IRF540NSTRLPBF,IRF540NS,

        Mfr.#: IRF540NSTRLPBF,IRF540NS,

        OMO.#: OMO-IRF540NSTRLPBF-IRF540NS--1190

        		 Neu und Original
        IRF540NSTRR

        Mfr.#: IRF540NSTRR

        OMO.#: OMO-IRF540NSTRR-1190

        		 HEXFET N-CH MOSFET 33A 100V D2PAK, PK
        IRF540STRPBF

        Mfr.#: IRF540STRPBF

        OMO.#: OMO-IRF540STRPBF-1190

        		 Neu und Original
        IRF5410

        Mfr.#: IRF5410

        OMO.#: OMO-IRF5410-1190

        		 Neu und Original
        IRF541FI

        Mfr.#: IRF541FI

        OMO.#: OMO-IRF541FI-1190

        		 Neu und Original
        IRF542NPBF

        Mfr.#: IRF542NPBF

        OMO.#: OMO-IRF542NPBF-1190

        		 Neu und Original
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        5500
        Menge eingeben:
        Der aktuelle Preis von IRF540ZSPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        1,58 $
        1,58 $
        10
        1,50 $
        14,96 $
        100
        1,42 $
        141,75 $
        500
        1,34 $
        669,40 $
        1000
        1,26 $
        1 260,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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