IRF6641

IRF6641TRPBF vs IRF6641TR1PBF vs IRF6641PBF

 
PartNumberIRF6641TRPBFIRF6641TR1PBFIRF6641PBF
DescriptionMOSFET 200V 1 N-CH HEXFET 59.9mOhms 34nCMOSFET MOSFT 200V 26A 60mOhm 34nC Qg
ManufacturerInfineonInfineonIR
Product CategoryMOSFETMOSFETIC Chips
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseDirectFET-MZDirectFET-MZ-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage200 V200 V-
Id Continuous Drain Current4.6 A4.6 A-
Rds On Drain Source Resistance51 mOhms51 mOhms-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge34 nC34 nC-
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation89 W89 W-
ConfigurationSingleSingle-
Channel ModeEnhancement--
TradenameDirectFET--
PackagingReelReel-
Height0.7 mm0.7 mm-
Length6.35 mm6.35 mm-
Transistor Type1 N-Channel1 N-Channel-
Width5.05 mm5.05 mm-
BrandInfineon / IRInfineon / IR-
Fall Time6.5 ns6.5 ns-
Product TypeMOSFETMOSFET-
Rise Time11 ns11 ns-
Factory Pack Quantity48001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time31 ns--
Typical Turn On Delay Time16 ns--
Part # AliasesSP001559700SP001563484-
Vgs th Gate Source Threshold Voltage-4.9 V-
Forward Transconductance Min-13 S-
Moisture Sensitive-Yes-
Unit Weight-0.008713 oz-
Hersteller Teil # Beschreibung RFQ
Infineon / IR
Infineon / IR
IRF6641TRPBF MOSFET 200V 1 N-CH HEXFET 59.9mOhms 34nC
IRF6641TR1PBF MOSFET MOSFT 200V 26A 60mOhm 34nC Qg
IRF6641PBF Neu und Original
Infineon Technologies
Infineon Technologies
IRF6641TR1PBF IGBT Transistors MOSFET MOSFT 200V 26A 60mOhm 34nC Qg
IRF6641TRPBF MOSFET 200V 1 N-CH HEXFET 59.9mOhms 34nC
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