IRF6641TR1PBF

Mfr. #:: IRF6641TR1PBF
Hersteller:: Infineon / IR
Beschreibung:: MOSFET MOSFT 200V 26A 60mOhm 34nC Qg
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IRF6641TR1PBF Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRF6641TR1PBF Datasheet IRF6641TR1PBF Datasheet (P4-P6)IRF6641TR1PBF Datasheet (P7-P9)IRF6641TR1PBF Datasheet (P10)
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: DirectFET-MZ

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 200 V

Id - Kontinuierlicher Drainstrom:: 4.6 A

Rds On - Drain-Source-Widerstand:: 51 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 4.9 V

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 34 nC

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 89 W

Aufbau:: Single

Verpackung:: Spule

Höhe:: 0.7 mm

Länge:: 6.35 mm

Transistortyp:: 1 N-Channel

Breite:: 5.05 mm

Marke:: Infineon / IR

Vorwärtstranskonduktanz - Min:: 13 S

Abfallzeit:: 6.5 ns

Feuchtigkeitsempfindlich:: ja

Produktart:: MOSFET

Anstiegszeit:: 11 ns

Werkspackungsmenge:: 1000

Unterkategorie:: MOSFETs

Teil # Aliase:: SP001563484

Gewichtseinheit:: 0.008713 oz

Tags: IRF6641, IRF664, IRF66, IRF6, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF6641TR1PBF Beschreibung

***ical: Trans MOSFET N-CH 200V 4.6A 7-Pin Direct-FET MZ T/R

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:3.7A; On Resistance, Rds(on):59.9mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MZ ;RoHS Compliant: Yes

***ernational Rectifier: A 200V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 26 amperes optimized with low on resistance for applications such as active ORýing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

***ment14 APAC: MOSFET, N, DIRECTFET, MZ; Transistor Polarity:N Channel; Continuous Drain Current Id:4.6A; Drain Source Voltage Vds:200V; On Resistance Rds(on):59.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Transistor Case Style:DirectFET; No. of Pins:5; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:46mJ; Base Number:6641; Cont Current Id @ 70°C:3.7A; Current Id Max:3.7A; Fall Time tf:65ns; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; Package / Case:MZ; Power Dissipation Pd:2.8mW; Pulse Current Idm:37A; Rise Time:11ns; Storage Temperature Max:150°C; Storage Temperature Min:-40°C; Termination Type:SMD; Voltage Vds:200V; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IRF6641TR1PBF DISTI # IRF6641TR1PBFTR-ND	Infineon Technologies AG	MOSFET N-CH 200V 4.6A DIRECTFET RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IRF6641TR1PBF DISTI # IRF6641TR1PBFCT-ND	Infineon Technologies AG	MOSFET N-CH 200V 4.6A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IRF6641TR1PBF DISTI # IRF6641TR1PBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 200V 4.6A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IRF6641TR1PBF DISTI # 70018844	Infineon Technologies AG	200V SINGLE N-CHANNEL HEXFET POWER MOSFET,DIRECTFET MZ PKG RoHS: Compliant	0	1000:$2.4300 2000:$2.2300
IRF6641TR1PBF DISTI # 942-IRF6641TR1PBF	Infineon Technologies AG	MOSFET MOSFT 200V 26A 60mOhm 34nC Qg RoHS: Compliant	0
IRF6641TR1PBF	International Rectifier		2440
IRF6641TR1PBF	International Rectifier	RoHS: Compliant	Europe - 1000
IRF6641TR1PBF DISTI # 1388588RL	Infineon Technologies AG	MOSFET, N, DIRECTFET, MZ RoHS: Compliant	0	1:$4.0300 10:$3.7800 100:$3.4200 250:$3.3000 500:$3.1300 1000:$3.1300 2000:$3.0200 5000:$2.8800
IRF6641TR1PBF DISTI # 1388588	Infineon Technologies AG	MOSFET, N, DIRECTFET, MZ RoHS: Compliant	0	1:$4.0300 10:$3.7800 100:$3.4200 250:$3.3000 500:$3.1300 1000:$3.1300 2000:$3.0200 5000:$2.8800

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: IRF6648TRPBF OMO.#: OMO-IRF6648TRPBF	MOSFET 60V 1 N-CH 5.5mOhm DirectFET 36nC
	Mfr.#: IRF6643TRPBF OMO.#: OMO-IRF6643TRPBF	MOSFET 150V 1 N-CH HEXFET 34.5mOhms 39nC
	Mfr.#: IRF6644TR1PBF OMO.#: OMO-IRF6644TR1PBF	MOSFET MOSFT 100V 60A 13mOhm 35nC Qg
	Mfr.#: IRF6641TR1PBF OMO.#: OMO-IRF6641TR1PBF	MOSFET MOSFT 200V 26A 60mOhm 34nC Qg
	Mfr.#: IRF6646TR1 OMO.#: OMO-IRF6646TR1-INFINEON-TECHNOLOGIES	MOSFET N-CH 80V 12A DIRECTFET
	Mfr.#: IRF6645TR1PBF OMO.#: OMO-IRF6645TR1PBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 5.7A DIRECTFET
	Mfr.#: IRF6643TRPBF OMO.#: OMO-IRF6643TRPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 150V 6.2A DIRECTFET
	Mfr.#: IRF6645TRPBF. OMO.#: OMO-IRF6645TRPBF--1190	Neu und Original
	Mfr.#: IRF6648TR1PBF , 2SJ579 OMO.#: OMO-IRF6648TR1PBF-2SJ579-1190	Neu und Original
	Mfr.#: IRF6645TRPBF OMO.#: OMO-IRF6645TRPBF-INFINEON-TECHNOLOGIES	RF Bipolar Transistors MOSFET 100V 1 N-CH HEXFET DIRECTFET SJ

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 4000
Menge eingeben:

Der aktuelle Preis von IRF6641TR1PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

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IRF6641TR1PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes