IRF78

IRF7855TRPBF vs IRF7855TRPB vs IRF7862PBF

 
PartNumberIRF7855TRPBFIRF7855TRPBIRF7862PBF
DescriptionMOSFET MOSFT 60V 12A 9.4mOhm 26nC QgIGBT Transistors MOSFET 30V 1 N-CH HEXFET 3.3mOhms 30nC
ManufacturerInfineonIRIR
Product CategoryMOSFETFETs - SingleIC Chips
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-8--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current12 A--
Rds On Drain Source Resistance7.4 mOhms--
Vgs th Gate Source Threshold Voltage4.9 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge26 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2.5 W--
ConfigurationSingleSingle-
PackagingReelReel-
Height1.75 mm--
Length4.9 mm--
Transistor Type1 N-Channel1 N-Channel-
Width3.9 mm--
BrandInfineon / IR--
Forward Transconductance Min14 S--
Fall Time12 ns12 ns-
Product TypeMOSFET--
Rise Time13 ns13 ns-
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time16 ns16 ns-
Typical Turn On Delay Time8.7 ns8.7 ns-
Part # AliasesSP001555708--
Unit Weight0.017870 oz0.017870 oz-
Package Case-SO-8-
Pd Power Dissipation-2.5 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-12 A-
Vds Drain Source Breakdown Voltage-60 V-
Vgs th Gate Source Threshold Voltage-4.9 V-
Rds On Drain Source Resistance-7.4 mOhms-
Qg Gate Charge-26 nC-
Forward Transconductance Min-14 S-
Hersteller Teil # Beschreibung RFQ
Infineon / IR
Infineon / IR
IRF7855TRPBF MOSFET MOSFT 60V 12A 9.4mOhm 26nC Qg
IRF7862TRPBF MOSFET MOSFT 30V 21A 3.3mOhm 30nC Qg
IRF7862TRPBF. Neu und Original
IRF7855TRPB Neu und Original
IRF7862PBF IGBT Transistors MOSFET 30V 1 N-CH HEXFET 3.3mOhms 30nC
IRF7862TRPBF-CUT TAPE Neu und Original
IRF7856TRPBF Neu und Original
Infineon Technologies
Infineon Technologies
IRF7855TRPBF MOSFET N-CH 60V 12A 8-SOIC
IRF7862TRPBF MOSFET N-CH 30V 21A 8-SOIC
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