PartNumber | IRF7809AVPBF | IRF7809AVPBF-1 | IRF7809AVPBFDKR-ND |
Description | MOSFET 30V 1 N-CH HEXFET 9mOhms 41nC | ||
Manufacturer | International Rectifier | - | - |
Product Category | Transistors - FETs, MOSFETs - Single | - | - |
Packaging | Tube | - | - |
Unit Weight | 540 mg | - | - |
Mounting Style | SMD/SMT | - | - |
Technology | Si | - | - |
Number of Channels | 1 Channel | - | - |
Configuration | Single Quad Drain Triple Source | - | - |
Package Case | SOIC-8 | - | - |
Transistor Type | 1 N-Channel | - | - |
Pd Power Dissipation | 2.5 W | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Fall Time | 10 ns | - | - |
Rise Time | 36 ns | - | - |
Vgs Gate Source Voltage | 12 V | - | - |
Id Continuous Drain Current | 13.3 A | - | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Rds On Drain Source Resistance | 9 mOhms | - | - |
Transistor Polarity | N-Channel | - | - |
Typical Turn Off Delay Time | 96 ns | - | - |
Typical Turn On Delay Time | 14 ns | - | - |
Qg Gate Charge | 41 nC | - | - |
Channel Mode | Enhancement | - | - |