IRF8252

IRF8252PBF vs IRF8252TRPBF vs IRF8252PBF-1

 
PartNumberIRF8252PBFIRF8252TRPBFIRF8252PBF-1
DescriptionMOSFET 25V 1 N-CH HEXFET 2.7mOhms 35nCMOSFET MOSFT 25V 25A 2.7mOhm 35nC Qg
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-8SO-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage25 V25 V-
Id Continuous Drain Current25 A25 A-
Rds On Drain Source Resistance3.7 mOhms3.7 mOhms-
Vgs th Gate Source Threshold Voltage2.35 V--
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge35 nC35 nC-
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W2.5 W-
ConfigurationSingleSingle-
Channel ModeEnhancement--
PackagingTubeReel-
Height1.75 mm1.75 mm-
Length4.9 mm4.9 mm-
Transistor Type1 N-Channel1 N-Channel-
TypeHEXFET Power MOSFET--
Width3.9 mm3.9 mm-
BrandInfineon / IRInfineon / IR-
Forward Transconductance Min89 S--
Fall Time12 ns--
Product TypeMOSFETMOSFET-
Rise Time32 ns--
Factory Pack Quantity954000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time19 ns--
Typical Turn On Delay Time23 ns--
Part # AliasesSP001554466SP001572226-
Unit Weight0.019048 oz0.019048 oz-
Hersteller Teil # Beschreibung RFQ
Infineon / IR
Infineon / IR
IRF8252PBF MOSFET 25V 1 N-CH HEXFET 2.7mOhms 35nC
IRF8252TRPBF MOSFET MOSFT 25V 25A 2.7mOhm 35nC Qg
IRF8252TRPBF. Neu und Original
IRF8252PBF-1 Neu und Original
Infineon Technologies
Infineon Technologies
IRF8252TRPBF-1 MOSFET N-CH 25V 25A
IRF8252TRPBF MOSFET N-CH 25V 25A 8-SO
IRF8252PBF Darlington Transistors MOSFET 25V 1 N-CH HEXFET 2.7mOhms 35nC
IRF8252 Neu und Original
IRF8252TR Neu und Original
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