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| PartNumber | IRFH5302DTRPBF | IRFH5302DTR2PBF | IRFH5302TR2PBF |
| Description | MOSFET 20V DUAL N / P CH 2.5mOhms 26nC | MOSFET N-CH 30V 29A 8VQFN | IGBT Transistors MOSFET MOSFT 30V 100A 2.1mOhm mx 29nC Qg |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PQFN-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 100 A | - | - |
| Rds On Drain Source Resistance | 2.5 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 26 nC | - | - |
| Pd Power Dissipation | 3.6 W | - | - |
| Configuration | Single | - | - |
| Packaging | Reel | - | - |
| Height | 0.83 mm | - | - |
| Length | 6 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5 mm | - | - |
| Brand | Infineon / IR | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SP001570962 | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon / IR |
IRFH5302TRPBF | MOSFET 30V 1 N-CH HEXFET 2.1mOhms 29nC | |
| IRFH5302DTRPBF | MOSFET 20V DUAL N / P CH 2.5mOhms 26nC | ||
Infineon Technologies |
IRFH5302DTRPBF | MOSFET N-CH 30V 29A 8VQFN | |
| IRFH5302DTR2PBF | MOSFET N-CH 30V 29A 8VQFN | ||
| IRFH5302TRPBF | IGBT Transistors MOSFET 30V 1 N-CH HEXFET 2.1mOhms 29nC | ||
| IRFH5302TR2PBF | IGBT Transistors MOSFET MOSFT 30V 100A 2.1mOhm mx 29nC Qg | ||
| IRFH5302DTRPBF. | Neu und Original | ||
| IRFH5302D | Neu und Original | ||
| IRFH5302PBF | Neu und Original | ||
| IRFH5302TRPBF , 2SK1196 | Neu und Original | ||
| IRFH5302TRPBF,IRFH5302TR | Neu und Original | ||
| IRFH5302TRPBF. | Neu und Original |