IRFH5302DTRPBF

IRFH5302DTRPBF
Mfr. #:
IRFH5302DTRPBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 30V 29A 8VQFN
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFH5302DTRPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IRFH5302DTRPBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
IR
Produktkategorie
FETs - Einzeln
Verpackung
Spule
Montageart
SMD/SMT
Paket-Koffer
PQFN-8
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
1 N-Channel
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
3.6 W
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
100 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Widerstand
2.5 mOhms
Transistor-Polarität
N-Kanal
Qg-Gate-Ladung
26 nC
Tags
IRFH5302DT, IRFH5302D, IRFH5302, IRFH53, IRFH5, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
On a Reel of 4000, N-Channel MOSFET, 100 A, 30 V, 8-Pin PQFN Infineon IRFH5302DTRPBF
***ure Electronics
Single N-Channel 30 V 2.5 mOhm 26 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***ied Electronics & Automation
MOSFET, N-Channel, 30V FETky, 100A, 2.5 mOhm, 26 nC Qg, PQFN
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET with an integrated Schottky Diode in a 5mm X 6mm PQFN package
***ical
Trans MOSFET N-CH 30V 29A 8-Pin PQFN EP T/R
***i-Key
MOSFET N-CH 30V 29A 8VQFN
***nell
MOSFET, CAN N, 30V, 100A, 150°C, 104W;
***ment14 APAC
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.35V; Power Dissipation Pd:3.6W
***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.35V; Power Dissipation Pd:3.6W;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDSon (less than 1.15 mO); Low Thermal Resistance to PCB (less than 0.8C/W); 100% Rg tested; Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
PQFN 5x6 Package HEXFET® Power MOSFETs
Infineon PQFN Package HEXFET Power MOSFETs are an addition to an extensive portfolio of devices featuring IR's latest low-voltage HEXFET MOSFET silicon in a PQFN package for low power applications including battery protection switch, secondary side synchronous rectification, inverter for DC motors, DC-DC brick, and boost converters. Featuring a very low on-state resistance (RDS(on)) to significantly cut conduction losses, these new power MOSFETs are available as 20V, 40V and 75V devices in N-Channel configurations. As a result of the low RDS(on) of this platform, these devices can be used to replace MOSFETs in larger packages to save board space and reduce system cost.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IRFH5302DTRPBF
DISTI # IRFH5302DTRPBF-ND
Infineon Technologies AGMOSFET N-CH 30V 29A 8VQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 4000:$0.9615
IRFH5302DTRPBF
DISTI # IRFH5302DTRPBF
Infineon Technologies AGTrans MOSFET N-CH 30V 29A 8-Pin PQFN EP T/R (Alt: IRFH5302DTRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel
Asia - 0
  • 4000:$0.7746
  • 8000:$0.7428
  • 12000:$0.7328
  • 20000:$0.7042
  • 40000:$0.6952
  • 100000:$0.6778
  • 200000:$0.6613
IRFH5302DTRPBF
DISTI # IRFH5302DTRPBF
Infineon Technologies AGTrans MOSFET N-CH 30V 29A 8-Pin PQFN EP T/R - Tape and Reel (Alt: IRFH5302DTRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel
Americas - 0
  • 4000:$0.7459
  • 8000:$0.7189
  • 16000:$0.6929
  • 24000:$0.6699
  • 40000:$0.6579
IRFH5302DTRPBF
DISTI # 70019249
Infineon Technologies AGMOSFET,N-Channel,30V FETky,100A,2.5mOhm,26 nC Qg,PQFN
RoHS: Compliant
0
  • 4000:$1.5700
IRFH5302DTRPBF
DISTI # 942-IRFH5302DTRPBF
Infineon Technologies AGMOSFET 20V DUAL N / P CH 2.5mOhms 26nC
RoHS: Compliant
155
  • 1:$1.9100
  • 10:$1.6200
  • 100:$1.3000
  • 500:$1.1400
  • 1000:$0.9390
  • 4000:$0.8420
  • 8000:$0.8100
IRFH5302DTRPBF
DISTI # 1300980P
Infineon Technologies AGMOSFET HEXFET N-CH 30V 29A PQFN8, RL1950
  • 25:£0.5360
Bild Teil # Beschreibung
IRFH5301TR2PBF

Mfr.#: IRFH5301TR2PBF

OMO.#: OMO-IRFH5301TR2PBF

MOSFET MOSFT 30V 100A 1.85mOhm mx 37nC Qg
IRFH5302DTRPBF

Mfr.#: IRFH5302DTRPBF

OMO.#: OMO-IRFH5302DTRPBF-INFINEON-TECHNOLOGIES

MOSFET N-CH 30V 29A 8VQFN
IRFH5301TRPBF-CUT TAPE

Mfr.#: IRFH5301TRPBF-CUT TAPE

OMO.#: OMO-IRFH5301TRPBF-CUT-TAPE-1190

Neu und Original
IRFH5301TR2PBF

Mfr.#: IRFH5301TR2PBF

OMO.#: OMO-IRFH5301TR2PBF-INFINEON-TECHNOLOGIES

MOSFET N-CH 30V 35A 5X6 PQFN
IRFH5300TRPBF,IRFH5300TR

Mfr.#: IRFH5300TRPBF,IRFH5300TR

OMO.#: OMO-IRFH5300TRPBF-IRFH5300TR-1190

Neu und Original
IRFH5301TRPBF

Mfr.#: IRFH5301TRPBF

OMO.#: OMO-IRFH5301TRPBF-INFINEON-TECHNOLOGIES

MOSFET N-CH 30V 35A 5X6 PQFN
IRFH5301TRPBF,IRFH5301

Mfr.#: IRFH5301TRPBF,IRFH5301

OMO.#: OMO-IRFH5301TRPBF-IRFH5301-1190

Neu und Original
IRFH5306TRPBF

Mfr.#: IRFH5306TRPBF

OMO.#: OMO-IRFH5306TRPBF-INFINEON-TECHNOLOGIES

MOSFET N-CH 30V 15A 5X6 PQFN
IRFH5302TRPBF

Mfr.#: IRFH5302TRPBF

OMO.#: OMO-IRFH5302TRPBF-INFINEON-TECHNOLOGIES

IGBT Transistors MOSFET 30V 1 N-CH HEXFET 2.1mOhms 29nC
IRFH5300TR2PBF

Mfr.#: IRFH5300TR2PBF

OMO.#: OMO-IRFH5300TR2PBF-INFINEON-TECHNOLOGIES

IGBT Transistors MOSFET MOSFT 30V 100A 1.4mOhm mx 50nC Qg
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4500
Menge eingeben:
Der aktuelle Preis von IRFH5302DTRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,95 $
0,95 $
10
0,91 $
9,06 $
100
0,86 $
85,87 $
500
0,81 $
405,50 $
1000
0,76 $
763,30 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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