PartNumber | IRFH5302DTRPBF | IRFH5302DTR2PBF | IRFH5302D |
Description | MOSFET 20V DUAL N / P CH 2.5mOhms 26nC | MOSFET N-CH 30V 29A 8VQFN | |
Manufacturer | Infineon | - | IR |
Product Category | MOSFET | - | FETs - Single |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | PQFN-8 | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 100 A | - | - |
Rds On Drain Source Resistance | 2.5 mOhms | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 26 nC | - | - |
Pd Power Dissipation | 3.6 W | - | - |
Configuration | Single | - | 1 N-Channel |
Packaging | Reel | - | Reel |
Height | 0.83 mm | - | - |
Length | 6 mm | - | - |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Width | 5 mm | - | - |
Brand | Infineon / IR | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 4000 | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | SP001570962 | - | - |
Package Case | - | - | PQFN-8 |
Pd Power Dissipation | - | - | 3.6 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 100 A |
Vds Drain Source Breakdown Voltage | - | - | 30 V |
Rds On Drain Source Resistance | - | - | 2.5 mOhms |
Qg Gate Charge | - | - | 26 nC |