IRFHM830DT

IRFHM830DTR2PBF vs IRFHM830DTRPBF. vs IRFHM830DTRPBF

 
PartNumberIRFHM830DTR2PBFIRFHM830DTRPBF.IRFHM830DTRPBF
DescriptionMOSFET 30V 1 N-CH HEXFET 4.3mOhms 13nCDarlington Transistors MOSFET MOSFT 30V 40A 4.3mOhm 1.1Ohm RG
ManufacturerInfineon-International Rectifier
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CasePQFN-8--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current20 A--
Rds On Drain Source Resistance5.7 mOhms--
Vgs th Gate Source Threshold Voltage1.8 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge13 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation2.8 W--
ConfigurationSingle-Single Quad Drain Triple Source
PackagingReel-Reel
Height1.05 mm--
Length3.3 mm--
Transistor Type1 N-Channel-1 N-Channel
Width3.3 mm--
BrandInfineon / IR--
Forward Transconductance Min69 S--
Fall Time6.7 ns-6.7 ns
Product TypeMOSFET--
Rise Time20 ns-20 ns
Factory Pack Quantity400--
SubcategoryMOSFETs--
Typical Turn Off Delay Time9.1 ns-9.1 ns
Typical Turn On Delay Time9.8 ns-9.8 ns
Part # AliasesSP001551956--
Unit Weight0.017637 oz--
Package Case--PQFN-8
Pd Power Dissipation--2.8 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--20 A
Vds Drain Source Breakdown Voltage--30 V
Vgs th Gate Source Threshold Voltage--1.8 V
Rds On Drain Source Resistance--5.7 mOhms
Qg Gate Charge--13 nC
Forward Transconductance Min--69 S
Channel Mode--Enhancement
Hersteller Teil # Beschreibung RFQ
Infineon / IR
Infineon / IR
IRFHM830DTR2PBF MOSFET 30V 1 N-CH HEXFET 4.3mOhms 13nC
Infineon Technologies
Infineon Technologies
IRFHM830DTR2PBF MOSFET N-CH 30V 20A PQFN
IRFHM830DTRPBF Darlington Transistors MOSFET MOSFT 30V 40A 4.3mOhm 1.1Ohm RG
IRFHM830DTRPBF. Neu und Original
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