PartNumber | IRFHM830DTR2PBF | IRFHM830DTRPBF. | IRFHM830DTRPBF |
Description | MOSFET 30V 1 N-CH HEXFET 4.3mOhms 13nC | Darlington Transistors MOSFET MOSFT 30V 40A 4.3mOhm 1.1Ohm RG | |
Manufacturer | Infineon | - | International Rectifier |
Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | PQFN-8 | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 20 A | - | - |
Rds On Drain Source Resistance | 5.7 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1.8 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 13 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 2.8 W | - | - |
Configuration | Single | - | Single Quad Drain Triple Source |
Packaging | Reel | - | Reel |
Height | 1.05 mm | - | - |
Length | 3.3 mm | - | - |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Width | 3.3 mm | - | - |
Brand | Infineon / IR | - | - |
Forward Transconductance Min | 69 S | - | - |
Fall Time | 6.7 ns | - | 6.7 ns |
Product Type | MOSFET | - | - |
Rise Time | 20 ns | - | 20 ns |
Factory Pack Quantity | 400 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 9.1 ns | - | 9.1 ns |
Typical Turn On Delay Time | 9.8 ns | - | 9.8 ns |
Part # Aliases | SP001551956 | - | - |
Unit Weight | 0.017637 oz | - | - |
Package Case | - | - | PQFN-8 |
Pd Power Dissipation | - | - | 2.8 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 20 A |
Vds Drain Source Breakdown Voltage | - | - | 30 V |
Vgs th Gate Source Threshold Voltage | - | - | 1.8 V |
Rds On Drain Source Resistance | - | - | 5.7 mOhms |
Qg Gate Charge | - | - | 13 nC |
Forward Transconductance Min | - | - | 69 S |
Channel Mode | - | - | Enhancement |