PartNumber | IRFHM830TR2PBF | IRFHM830DTR2PBF | IRFHM830DTRPBF |
Description | MOSFET MOSFT 30V 40A 3.8mOhm | MOSFET 30V 1 N-CH HEXFET 4.3mOhms 13nC | Darlington Transistors MOSFET MOSFT 30V 40A 4.3mOhm 1.1Ohm RG |
Manufacturer | Infineon | Infineon | International Rectifier |
Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PQFN-8 | PQFN-8 | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
Id Continuous Drain Current | 21 A | 20 A | - |
Rds On Drain Source Resistance | 4.8 mOhms | 5.7 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1.8 V | 1.8 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 31 nC | 13 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 2.7 W | 2.8 W | - |
Configuration | Single | Single | Single Quad Drain Triple Source |
Packaging | Reel | Reel | Reel |
Height | 1.05 mm | 1.05 mm | - |
Length | 3.3 mm | 3.3 mm | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 3.3 mm | 3.3 mm | - |
Brand | Infineon / IR | Infineon / IR | - |
Forward Transconductance Min | 52 S | 69 S | - |
Fall Time | 9.2 ns | 6.7 ns | 6.7 ns |
Product Type | MOSFET | MOSFET | - |
Rise Time | 25 ns | 20 ns | 20 ns |
Factory Pack Quantity | 400 | 400 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 13 ns | 9.1 ns | 9.1 ns |
Typical Turn On Delay Time | 12 ns | 9.8 ns | 9.8 ns |
Part # Aliases | SP001560438 | SP001551956 | - |
Unit Weight | 0.070548 oz | 0.017637 oz | - |
Package Case | - | - | PQFN-8 |
Pd Power Dissipation | - | - | 2.8 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 20 A |
Vds Drain Source Breakdown Voltage | - | - | 30 V |
Vgs th Gate Source Threshold Voltage | - | - | 1.8 V |
Rds On Drain Source Resistance | - | - | 5.7 mOhms |
Qg Gate Charge | - | - | 13 nC |
Forward Transconductance Min | - | - | 69 S |
Channel Mode | - | - | Enhancement |