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IRFHM8329TRPBF

IRFHM8329TRPBF
Mfr. #:
IRFHM8329TRPBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET MOSFET, 30V, 25A, 4 3nC Qg, PQFN 3.3x3.3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFHM8329TRPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IRFHM8329TRPBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PQFN-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
16 A
Rds On - Drain-Source-Widerstand:
6.8 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.7 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
26 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.6 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
0.9 mm
Länge:
3.3 mm
Transistortyp:
1 N-Channel
Typ:
HEXFET Leistungs-MOSFET
Breite:
3.3 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
56 S
Abfallzeit:
14 ns
Produktart:
MOSFET
Anstiegszeit:
74 ns
Werkspackungsmenge:
4000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
14 ns
Typische Einschaltverzögerungszeit:
14 ns
Teil # Aliase:
SP001566808
Tags
IRFHM83, IRFHM8, IRFHM, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 6.1 mOhm 26 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PQFN 3.3X3.3 8L, RoHS
***ark
TAPE AND REEL / MOSFET, 30V, 25A, 4.9 mOhm, 13nC Qg, PQFN 3.3x3.3
***nell
MOSFET, N-CH, 30V, 57A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 57A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0048ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Pow
***ineon
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 3.8C/W); Low Profile (less than 1.05 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
***ure Electronics
Single N-Channel 30 V 6 mOhm 20 nC OptiMOS™ Power Mosfet - TDSON-8
***et
Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R
***nell
MOSFET, N-CH, 30V, 65A, PG-TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 65A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.005ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.2V; Power Dissipation Pd: 39W; Transistor Case Style: PG-TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 3 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***i-Key Marketplace
POWER FIELD-EFFECT TRANSISTOR, 1
*** Services
CoC and 2-years warranty / RFQ for pricing
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 3mm X 3mm PQFN package, PQFN 3X3 8L, RoHS
***(Formerly Allied Electronics)
MOSFET, 30V, 16A, 7.1 MOHM, 9.6 NC QG, PQFN33
***Yang
Trans MOSFET N-CH 30V 16A 8-Pin QFN T/R - Tape and Reel
***ark
Transistor; Continuous Drain Current, Id:16A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V; Power Dissipation, Pd:2.8W ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Low RDS(on); 100% Rg tested; Compatible with Existing Surface Mount Techniques; Very Low Gate Charge; Low Junction to PCB Thermal Resistance; Fully Characterized Avalanche Voltage and Current; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
***(Formerly Allied Electronics)
MOSFET, 30V, 40A, 4.3 MOHM, 13 NC QG, 1.1 OHM RG, MONOFETKY, PQFN 3.3X3.3
***ment14 APAC
MOSFET,N CH,SCH DIODE,30V,20A,PQFN33; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):3400µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:2.8W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:20A; Power Dissipation Pd:2.8W; Voltage Vgs Max:20V
***ineon
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 3.4C/W); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Schottky intrinsic diode with low forward voltage; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
***emi
N-Channel PowerTrench® SyncFET™ 30V, 49A, 2.8mΩ
***r Electronics
Power Field-Effect Transistor, 24A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
The FDMS8025S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
***nell
MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***Yang
Trans MOSFET N-CH 30V 26A 8-Pin Power 56 T/R - Tape and Reel
*** Stop Electro
Power Field-Effect Transistor, 26A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:59W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMS8023S has been designed to minimize losses in power conversion application. Advancements in both Silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
***emi
PowerTrench® MOSFET, N-Channel, 30V, 40A, 15mΩ
***ure Electronics
FDD8878 Series 30 V 11 A 15 mOhm SMT N-Ch PowerTrench® MOSFET - TO-252AA
***r Electronics
Power Field-Effect Transistor, 36A I(D), 30V, 0.0185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Dual PQFN HEXFET® Power MOSFETs
Infineon Dual PQFN HEXFET® Power MOSFETs integrate two HEXFET® MOSFETs utilizing their latest silicon technology to deliver a high density, cost effective solution for low power applications including smart phones, tablet PCs, camcorders, digital still cameras, DC motors and wireless inductive chargers as well as notebook PC, server and Netcom equipment. These Dual PQFN HEXFET® Power MOSFETs come in either a PQFN2x2 or PQFN3.3x3.3 which offer the flexibility of either common drain or half-bridge topologies. Utilizing their latest low-voltage silicon technologies (N and P), Infineon Dual PQFN HEXFET® Power MOSFETs deliver ultra-low losses.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IRFHM8329TRPBF
DISTI # V72:2272_13891082		Infineon Technologies AGTrans MOSFET N-CH 30V 16A 8-Pin PQFN EP T/R4000
  • 3000:$0.2249
  • 1000:$0.2273
  • 500:$0.2591
  • 250:$0.2761
  • 100:$0.2792
  • 25:$0.3726
  • 10:$0.3935
  • 1:$0.4555
IRFHM8329TRPBF
DISTI # IRFHM8329TRPBFCT-ND		Infineon Technologies AGMOSFET N-CH 30V 16A PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4474In Stock
  • 1000:$0.3340
  • 500:$0.4094
  • 100:$0.5412
  • 10:$0.6920
  • 1:$0.7800
IRFHM8329TRPBF
DISTI # IRFHM8329TRPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 30V 16A PQFN
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4474In Stock
  • 1000:$0.3340
  • 500:$0.4094
  • 100:$0.5412
  • 10:$0.6920
  • 1:$0.7800
IRFHM8329TRPBF
DISTI # IRFHM8329TRPBFTR-ND		Infineon Technologies AGMOSFET N-CH 30V 16A PQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Limited Supply - Call
  • 4000:$0.2969
IRFHM8329TRPBF
DISTI # 24327846		Infineon Technologies AGTrans MOSFET N-CH 30V 16A 8-Pin PQFN EP T/R8000
  • 4000:$0.1762
IRFHM8329TRPBF
DISTI # 30334270		Infineon Technologies AGTrans MOSFET N-CH 30V 16A 8-Pin PQFN EP T/R4000
  • 3000:$0.2249
  • 1000:$0.2273
  • 500:$0.2591
  • 250:$0.2761
  • 100:$0.2792
  • 38:$0.3726
IRFHM8329TRPBF
DISTI # IRFHM8329TRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 16A 8-Pin PQFN EP T/R - Tape and Reel (Alt: IRFHM8329TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.1909
  • 8000:$0.1839
  • 16000:$0.1779
  • 24000:$0.1719
  • 40000:$0.1689
IRFHM8329TRPBF
DISTI # SP001566808		Infineon Technologies AGTrans MOSFET N-CH 30V 16A 8-Pin PQFN EP T/R (Alt: SP001566808)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Europe - 0
  • 4000:€0.1919
  • 8000:€0.1859
  • 16000:€0.1859
  • 24000:€0.1849
  • 40000:€0.1849
IRFHM8329TRPBF
DISTI # 91Y4685		Infineon Technologies AGMOSFET, N-CH, 30V, 57A, PQFN-8,Transistor Polarity:N Channel,Continuous Drain Current Id:57A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0048ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,Power RoHS Compliant: Yes3362
  • 1:$0.6300
  • 10:$0.5160
  • 25:$0.4550
  • 50:$0.3940
  • 100:$0.3330
  • 250:$0.3110
  • 500:$0.2890
  • 1000:$0.2670
IRFHM8329TRPBF
DISTI # 942-IRFHM8329TRPBF		Infineon Technologies AGMOSFET MOSFET, 30V, 25A, 4 3nC Qg, PQFN 3.3x3.3
RoHS: Compliant		4712
  • 1:$0.6300
  • 10:$0.5160
  • 100:$0.3330
  • 1000:$0.2670
IRFHM8329TRPBF
DISTI # 9155001P		Infineon Technologies AGMOSFET N-CHANNEL HEXFET 30V 16A PQFN8, RL2960
  • 200:£0.1330
IRFHM8329TRPBF
DISTI # IRFHM8329TRPBF		Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,16A,2.6W,PQFN3.3X3.32232
  • 3:$0.3500
  • 10:$0.3200
  • 25:$0.2700
  • 100:$0.2500
IRFHM8329TRPBF
DISTI # 2580012		Infineon Technologies AGMOSFET, N-CH, 30V, 57A, PQFN-8
RoHS: Compliant		3362
  • 1:$1.1900
  • 10:$1.0500
  • 100:$0.8050
  • 500:$0.5970
  • 1000:$0.4780
IRFHM8329TRPBF
DISTI # C1S322000490886		Infineon Technologies AGTrans MOSFET N-CH 30V 16A 8-Pin PQFN EP T/R
RoHS: Compliant		8000
  • 4000:$0.2910
IRFHM8329TRPBF
DISTI # C1S322000490895		Infineon Technologies AGTrans MOSFET N-CH 30V 16A 8-Pin PQFN EP T/R
RoHS: Compliant		4000
  • 250:$0.2854
  • 100:$0.2862
  • 25:$0.3948
  • 10:$0.3968
IRFHM8329TRPBF
DISTI # 2580012		Infineon Technologies AGMOSFET, N-CH, 30V, 57A, PQFN-8
RoHS: Compliant		3422
  • 5:£0.4420
  • 25:£0.1680
  • 100:£0.1650
  • 250:£0.1620
  • 500:£0.1580
Bild Teil # Beschreibung
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1987
Menge eingeben:
Der aktuelle Preis von IRFHM8329TRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,62 $
0,62 $
10
0,52 $
5,16 $
100
0,33 $
33,30 $
1000
0,27 $
267,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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