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IRFHM8342TRPBF

IRFHM8342TRPBF
Mfr. #:
IRFHM8342TRPBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET 30V 3.8nC SGL N-CH HEXFET Pwr MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFHM8342TRPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IRFHM8342TRPBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PQFN-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
10 A
Rds On - Drain-Source-Widerstand:
20 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.8 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
10 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.6 W
Aufbau:
Single
Handelsname:
SmallPowIR
Verpackung:
Spule
Höhe:
1.05 mm
Länge:
3.3 mm
Serie:
IRFHM8342
Transistortyp:
1 N-Channel
Breite:
3.3 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
19 S
Abfallzeit:
5.6 ns
Produktart:
MOSFET
Anstiegszeit:
30 ns
Werkspackungsmenge:
4000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
7.6 ns
Typische Einschaltverzögerungszeit:
8.1 ns
Teil # Aliase:
SP001551976
Tags
IRFHM83, IRFHM8, IRFHM, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 16 mOhm 5 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PQFN 3.3X3.3 8L, RoHS
***ical
Trans MOSFET N-CH 30V 10A 8-Pin PQFN EP T/R
***ineon
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 6.2C/W); Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
***(Formerly Allied Electronics)
IRF8707TRPBF N-channel MOSFET Transistor, 11 A, 30 V, 8-Pin SOIC
*** Electronics
In a Pack of 10, IRF8707PBF N-Channel MOSFET, 11 A, 30 V HEXFET, 8-Pin SOIC Infineon
***ure Electronics
Single N-Channel 30 V 17.5 mOhm 9.3 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH Si 30V 11A 8-Pin SOIC T/R / MOSFET N-CH 30V 11A 8-SOIC
***ark
N Channel Mosfet, 30V, 11A, Soic; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; On Resistance Rds(On):0.0119Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ure Electronics
Single N-Channel 30 V 12.4 mOhm 5.4 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PQFN 3.3X3.3 8L, RoHS
***ark
TAPE AND REEL / MOSFET, 30V,A, 12mOhm, 5nC, PQFN3.3x3.3 single
***p One Stop
Trans MOSFET N-CH 30V 12A 8-Pin PQFN EP T/R
***ineon
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 5.0C/W); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
***ark
N CH POWER MOSFET, HEXFET, 30V, 11A, SO-8; Transistor Polarity:N Channel; Contin
***(Formerly Allied Electronics)
MOSFET, 30V, 11A, 11.9 MOHM, 6.2 NC QG, SO-8, HALOGEN-FREE
***et
Trans MOSFET N-CH 30V 11A 8-Pin SOIC T/R
***nell
MOSFET, N-CH, 30V, 11A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0093ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Pow
***emi
N-Channel Fast Switching PowerTrench® MOSFET, 30V, 13A, 11.3mΩ
***et Europe
Trans MOSFET N-CH 30V 13A 8-Pin SOIC N T/R
***ment14 APAC
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:3W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:13A; Package / Case:SOIC-8; Power Dissipation Pd:3W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
***ure Electronics
Dual N-Channel 30 V 15.5 mOhm 5.7 nC HEXFET® Power Mosfet - SOIC-8
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 8A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ment14 APAC
MOSFET, DUAL N-CH 30V 8A/11A SO8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):15.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.4W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8mA; Package / Case:SOIC; Power Dissipation Pd:2.4W; Power Dissipation Pd:2.4W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
***ark
MOSFET, N-CH, 30V, 6MLP; Transistor Polarity:N Channel; Continuous Drain Current
***emi
N-Channel Power Trench® MOSFET 30V, 9.0A, 16mΩ
***ure Electronics
N-Channel 30 V 9 A 16 mOhm 2.4 W SMT Power Trench® MOSFET - MicroFET-6 (2x2)
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that has been optimized for rDS(on), switching performance.
***nell
MOSFET, N-CH, 30V, 6MLP; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.4W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:MicroFET; No. of Pins:6; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
Small PowIR MOSFETs
Infineon Small PowIR MOSFETs combine high performance silicon technology with small and innovative packaging to offer designers more flexibility when it comes to making a MOSFET selection. The IRLML6244TRPBF provides 21 mO max @ 4.5Vgs RDS(on). The new 2x2 PQFN package offers some of the smallest dual configurations possible (dual N or dual P) while providing 19°C/W optimal thermal performance. Infineon Small PowIR MOSFETs are available in SO-8, TSOP-6 and PQFN 3x3 packages allowing designers to maximize board space, save on part count and improve system efficiency.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IRFHM8342TRPBF
DISTI # V72:2272_13890761		Infineon Technologies AGTrans MOSFET N-CH 30V 10A 8-Pin PQFN EP T/R2488
  • 1000:$0.2064
  • 500:$0.2544
  • 250:$0.2572
  • 100:$0.2601
  • 25:$0.3730
  • 10:$0.3776
  • 1:$0.4321
IRFHM8342TRPBF
DISTI # IRFHM8342TRPBFCT-ND		Infineon Technologies AGMOSFET N-CH 30V 10A 8PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    IRFHM8342TRPBF
    DISTI # IRFHM8342TRPBFDKR-ND    		Infineon Technologies AGMOSFET N-CH 30V 10A 8PQFN
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      IRFHM8342TRPBF
      DISTI # IRFHM8342TRPBFTR-ND      		Infineon Technologies AGMOSFET N-CH 30V 10A 8PQFN
      RoHS: Compliant
      Min Qty: 4000
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 4000:$0.2725
      IRFHM8342TRPBF
      DISTI # 24576937      		Infineon Technologies AGTrans MOSFET N-CH 30V 10A 8-Pin PQFN EP T/R4000
      • 4000:$0.1495
      IRFHM8342TRPBF
      DISTI # 31035522      		Infineon Technologies AGTrans MOSFET N-CH 30V 10A 8-Pin PQFN EP T/R2488
      • 1000:$0.2064
      • 500:$0.2544
      • 250:$0.2572
      • 100:$0.2601
      • 44:$0.3730
      IRFHM8342TRPBF
      DISTI # IRFHM8342TRPBF      		Infineon Technologies AGTrans MOSFET N-CH 30V 10A 8-Pin PQFN T/R (Alt: IRFHM8342TRPBF)
      RoHS: Compliant
      Min Qty: 4000
      Container: Tape and Reel      		Asia - 0
        IRFHM8342TRPBF
        DISTI # IRFHM8342TRPBF        		Infineon Technologies AGTrans MOSFET N-CH 30V 10A 8-Pin PQFN T/R - Tape and Reel (Alt: IRFHM8342TRPBF)
        RoHS: Compliant
        Min Qty: 4000
        Container: Reel        		Americas - 0
        • 4000:$0.1649
        • 8000:$0.1589
        • 16000:$0.1529
        • 24000:$0.1479
        • 40000:$0.1459
        IRFHM8342TRPBF
        DISTI # SP001551976        		Infineon Technologies AGTrans MOSFET N-CH 30V 10A 8-Pin PQFN T/R (Alt: SP001551976)
        RoHS: Compliant
        Min Qty: 4000
        Container: Tape and Reel        		Europe - 0
        • 4000:€0.2769
        • 8000:€0.2149
        • 16000:€0.1759
        • 24000:€0.1489
        • 40000:€0.1379
        IRFHM8342TRPBF
        DISTI # 942-IRFHM8342TRPBF        		Infineon Technologies AGMOSFET 30V 3.8nC SGL N-CH HEXFET Pwr MOSFET
        RoHS: Compliant        		0
        • 1:$0.6300
        • 10:$0.5200
        • 100:$0.3170
        • 1000:$0.2450
        • 4000:$0.2090
        IRFHM8342TRPBF
        DISTI # C1S322000490983        		Infineon Technologies AGTrans MOSFET N-CH 30V 10A 8-Pin PQFN EP T/R
        RoHS: Compliant        		2488
        • 250:$0.2572
        • 100:$0.2601
        • 25:$0.3730
        • 10:$0.3776
        IRFHM8342TRPBF
        DISTI # C1S322000490992        		Infineon Technologies AGTrans MOSFET N-CH 30V 10A 8-Pin PQFN EP T/R
        RoHS: Compliant        		4000
        • 4000:$0.2380
        Bild Teil # Beschreibung
        FDWS9509L-F085

        Mfr.#: FDWS9509L-F085

        OMO.#: OMO-FDWS9509L-F085

        		 MOSFET PMOS PWR56 40V 8 MOHM
        VS-6EWH06FNTRHM3

        Mfr.#: VS-6EWH06FNTRHM3

        OMO.#: OMO-VS-6EWH06FNTRHM3

        		 Rectifiers 6 Amp 600 Volt
        VS-5EWL06FNTR-M3

        Mfr.#: VS-5EWL06FNTR-M3

        OMO.#: OMO-VS-5EWL06FNTR-M3

        		 Rectifiers Ultrafast 5A 600V 59ns
        UPW1H561MHD

        Mfr.#: UPW1H561MHD

        OMO.#: OMO-UPW1H561MHD

        		 Aluminum Electrolytic Capacitors - Radial Leaded 50volts 560uF 12.5x25 20% 5LS
        GMK316AB7475KLHT

        Mfr.#: GMK316AB7475KLHT

        OMO.#: OMO-GMK316AB7475KLHT

        		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 1206 35VDC 4.7uF 10% X7R AEC-Q200
        FDWS9509L-F085

        Mfr.#: FDWS9509L-F085

        OMO.#: OMO-FDWS9509L-F085-ON-SEMICONDUCTOR

        		 PMOS PWR56 40V 8 MOHM
        EEU-FR1E122L

        Mfr.#: EEU-FR1E122L

        OMO.#: OMO-EEU-FR1E122L-PANASONIC

        		 Aluminum Electrolytic Capacitors - Leaded 25VDC 1200uF 10x25mm LS5mm
        UPW1H561MHD

        Mfr.#: UPW1H561MHD

        OMO.#: OMO-UPW1H561MHD-NICHICON

        		 Aluminum Electrolytic Capacitors - Leaded 50volts 560uF 12.5x25 20% 5LS
        VS-6EWH06FNTRHM3

        Mfr.#: VS-6EWH06FNTRHM3

        OMO.#: OMO-VS-6EWH06FNTRHM3-VISHAY

        		 Rectifiers 6 Amp 600 Volt
        VS-5EWL06FNTR-M3

        Mfr.#: VS-5EWL06FNTR-M3

        OMO.#: OMO-VS-5EWL06FNTR-M3-VISHAY

        		 Rectifiers Ultrafast 5A 600V 59ns
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        1987
        Menge eingeben:
        Der aktuelle Preis von IRFHM8342TRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        0,62 $
        0,62 $
        10
        0,52 $
        5,20 $
        100
        0,32 $
        31,70 $
        1000
        0,24 $
        245,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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